BC848CLT1G ON Semiconductor, BC848CLT1G Datasheet - Page 6

• Manufacturer Part Number: BC848CLT1G
• Description: TRANS NPN LP 100MA 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of BC848CLT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: BC848CLT1GOSTR

2.0
1.6
1.2
0.8
0.4
6.0
4.0
2.0
40
20
10
0
0.02
0.1
0.2
Figure 13. Collector Saturation Region
0.05
20 mA
V
0.5
0.1
R
, REVERSE VOLTAGE (VOLTS)
10 mA
Figure 15. Capacitance
I
I
B
C
, BASE CURRENT (mA)
1.0
0.2
=
50 mA
2.0
0.5
C
ib
C
5.0
100 mA
1.0
ob
2.0
10
20
T
A
5.0
200 mA
= 25°C
T
A
= 25°C
http://onsemi.com
50
10
BC846B
100
20
6
1.0
1.4
1.8
2.2
2.6
3.0
500
200
100
50
20
0.2
Figure 14. Base−Emitter Temperature Coefficient
Figure 16. Current−Gain − Bandwidth Product
V
T
A
CE
0.5
= 25°C
= 5 V
q
VB
I
1.0
C
, COLLECTOR CURRENT (mA)
I
for V
C
1.0
, COLLECTOR CURRENT (mA)
BE
2.0
5.0
5.0
10
-55°C to 125°C
10
20
50 100
50
100
200