BSS63LT1G ON Semiconductor, BSS63LT1G Datasheet

BSS63LT1G

Manufacturer Part Number

BSS63LT1G

Description

TRANS PNP 100V 100MA SOT-23

Manufacturer

ON Semiconductor

Datasheet

1.BSS63LT1G.pdf (3 pages)

Specifications of BSS63LT1G

Transistor Type

PNP

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

100V

Vce Saturation (max) @ Ib, Ic

250mV @ 2.5mA, 25mA

Dc Current Gain (hfe) (min) @ Ic, Vce

30 @ 25mA, 1V

Power - Max

225mW

Frequency - Transition

95MHz

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Transistor Polarity

PNP

Number Of Elements

Collector-emitter Voltage

100V

Collector-base Voltage

110V

Emitter-base Voltage

Collector Current (dc) (max)

100mA

Dc Current Gain (min)

Power Dissipation

300mW

Frequency (max)

95MHz

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SOT-23

Configuration

Single

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

100 V

Emitter- Base Voltage Vebo

6 V

Continuous Collector Current

- 0.1 A

Maximum Dc Collector Current

0.1 A

Maximum Operating Frequency

95 MHz

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

30 at 10 mA at 1 V

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Compliant

Other names

BSS63LT1G
BSS63LT1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

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Bonase Electronics (HK) Co., Limited

Part Number:

BSS63LT1G

Manufacturer:

ON Semiconductor

Quantity:

16 850

Company:

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Part Number:

BSS63LT1G

Manufacturer:

Quantity:

30 000

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Part Number:

BSS63LT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

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17 990

Company:

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Part Number:

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Quantity:

17 685

Company:

H&T Electronics

Part Number:

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Quantity:

24 000

Current page: 1 of 3
Download datasheet (112Kb)

BSS63LT1G

High Voltage Transistor

PNP Silicon

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

August, 2009 − Rev. 5

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Collector −Emitter Voltage

Collector Current − Continuous

Total Device Dissipation FR−5 Board,

(Note 1) T

Derate above 25°C

Thermal Resistance Junction−to−Ambient

Total Device Dissipation

Alumina Substrate, (Note 2)

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

Compliant

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

= 25°C

= 10 kW

= 25°C

Characteristic

Rating

Symbol

CEO

, T

CER

qJA

stg

−55 to

Value

+150

−100

−110

−100

Max

225

556

300

417

1.8

2.4

mW/°C

mAdc

°C/W

Unit

Vdc

°C

†For information on tape and reel specifications,

BSS63LT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*Date Code orientation and/or overbar may

Device

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

ORDERING INFORMATION

MARKING DIAGRAM

http://onsemi.com

BASE

(Pb−free)

Package

= Device Code

= Date Code*

= Pb−Free Package

SOT−23

CASE 318

STYLE 6

SOT−23

BM M G

COLLECTOR

Publication Order Number:

EMITTER

3000/Tape & Reel

Shipping

BSS63LT1/D

†

Related parts for BSS63LT1G

BSS63LT1G Summary of contents

Page 1

... D 300 mW/°C 2.4 R 417 °C/W qJA −55 to °C J stg +150 BSS63LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER SOT−23 ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −100 mAdc) C Collector −Emitter Breakdown Voltage (I = −10 mAdc kW Collector −Base Breakdown Voltage (I = −10 mAdc, ...

Page 3

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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