MMBTA13LT1G ON Semiconductor, MMBTA13LT1G Datasheet - Page 12

• Manufacturer Part Number: MMBTA13LT1G
• Description: TRANS SS DARL NPN 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBTA13LT1G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 300mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 0.3 A
• Maximum Collector Cut-off Current: 0.1 uA
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 0.3 A
• Dc Collector/base Gain Hfe Min: 5000
• Minimum Operating Temperature: - 55 C
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage: 30V
• Emitter-base Voltage: 10V
• Collector-emitter Saturation Voltage: 1.5V
• Collector Current (dc) (max): 300mA
• Dc Current Gain: 5000
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBTA13LT1GOS; MMBTA13LT1GOS; MMBTA13LT1GOSTR

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Issue Date: 11 Jul 2008
Rev.07-02-06
Page 12 of 14