2N4401RLRAG ON Semiconductor, 2N4401RLRAG Datasheet - Page 5

• Manufacturer Part Number: 2N4401RLRAG
• Description: TRANS NPN GP SS 600MA 40V TO92
• Manufacturer: ON Semiconductor
• Type: General Purposer

Specifications of 2N4401RLRAG

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 250MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 600mA
• Power Dissipation: 625mW
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Configuration: Single
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 20 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 600 mA
• Current, Gain: 40
• Frequency: 250 MHz
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Collector To Emitter, Saturation: 0.75 V
• Voltage, Emitter To Base: 6 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 2N4401RLRAGOSTR

h
obtain these curves, a high−gain and a low−gain unit were
fe
This group of graphs illustrates the relationship between
300
200
100
and other “h” parameters for this series of transistors. To
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
70
50
30
20
10
0.1
0.1
0.2
0.2
Figure 13. Voltage Feedback Ratio
0.3
0.3
I
Figure 11. Current Gain
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
0.5 0.7 1.0
0.5 0.7 1.0
2N4401 UNIT 1
2N4401 UNIT 2
2.0 3.0
2.0
2N4401 UNIT 1
2N4401 UNIT 2
V
3.0
CE
= 10 Vdc, f = 1.0 kHz, T
5.0 7.0
5.0 7.0
http://onsemi.com
h PARAMETERS
10
10
5
5.0 k
2.0 k
1.0 k
selected from the 2N4401 lines, and the same units were
used to develop the correspondingly numbered curves on
each graph.
50 k
20 k
10 k
500
100
5.0
2.0
1.0
50
10
20
0.1
0.1
A
= 25°C
0.2
0.2
Figure 14. Output Admittance
Figure 12. Input Impedance
0.3
0.3
I
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
0.5 0.7 1.0
0.5 0.7 1.0
2N4401 UNIT 1
2N4401 UNIT 2
2.0 3.0
2.0 3.0
2N4401 UNIT 1
2N4401 UNIT 2
5.0 7.0
5.0 7.0
10
10