MMBT5089LT1G ON Semiconductor, MMBT5089LT1G Datasheet - Page 2

• Manufacturer Part Number: MMBT5089LT1G
• Description: TRANS GP SS NPN 25V LN SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT5089LT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 25V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 100µA, 5V
• Power - Max: 225mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 4.5 V
• Continuous Collector Current: 0.05 A
• Maximum Dc Collector Current: 0.05 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 400 at 0.1 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 25V
• Collector-base Voltage: 30V
• Emitter-base Voltage: 4.5V
• Collector Current (dc) (max): 50mA
• Dc Current Gain (min): 400
• Frequency (max): 50MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT5089LT1GOS; MMBT5089LT1GOS; MMBT5089LT1GOSTR

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain — Bandwidth Product
Collector−Base Capacitance
Emitter−Base Capacitance
Small Signal Current Gain
Noise Figure
(I
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(V
(V
(I
(I
C
C
C
C
C
C
C
C
C
C
CB
CB
EB(off)
EB(off)
CB
EB
= 1.0 mAdc, I
= 100 mAdc, I
= 100 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 10 mAdc, I
= 10 mAdc, I
= 500 mAdc, V
= 1.0 mAdc, V
= 100 mAdc, V
= 20 Vdc, I
= 15 Vdc, I
= 5.0 Vdc, I
= 0.5 Vdc, I
= 3.0 Vdc, I
= 4.5 Vdc, I
B
B
E
E
B
E
CE
E
C
CE
CE
CE
CE
CE
= 1.0 mAdc)
= 1.0 mAdc)
= 0)
= 0)
= 0)
= 0)
= 0, f = 1.0 MHz emitter guarded)
= 0, f = 1.0 MHz collector guarded)
C
C
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 20 MHz)
= 5.0 Vdc, f = 1.0 kHz)
= 5.0 Vdc, R
= 0)
= 0)
Characteristic
S
= 10 kW, f = 1.0 kHz)
(T
A
= 25°C unless otherwise noted)
R
S
Figure 1. Transistor Noise Model
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n
http://onsemi.com
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2
TRANSISTOR
IDEAL
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
I
CE(sat)
BE(sat)
I
h
C
CBO
EBO
C
NF
h
f
FE
T
cb
eb
fe
Min
300
400
350
450
300
400
350
450
30
25
35
30
50
−
−
−
−
−
−
−
−
−
−
1200
1400
1800
Max
100
900
0.5
0.8
4.0
3.0
2.0
50
50
50
10
−
−
−
−
−
−
−
−
−
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
dB
pF
pF
−
−