MMBT6428LT1G ON Semiconductor, MMBT6428LT1G Datasheet - Page 5

• Manufacturer Part Number: MMBT6428LT1G
• Description: TRANS SS NPN 50V LN SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT6428LT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 100µA, 5V
• Power - Max: 225mW
• Frequency - Transition: 700MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 700 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 250
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 250
• Frequency (max): 700MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBT6428LT1GOS; MMBT6428LT1GOS; MMBT6428LT1GOSTR

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A
A1
E
1
3
D
e
2
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
b
H
E
SEE VIEW C
0.037
0.95
0.035
N. American Technical Support: 800−282−9855 Toll Free
Europe, Middle East and Africa Technical Support:
Japan Customer Focus Center
PACKAGE DIMENSIONS
USA/Canada
Phone: [phone]
Phone: 81−3−5773−3850
0.9
VIEW C
0.031
0.8
SOLDERING FOOTPRINT
L1
http://onsemi.com
L
SOT−23 (TO236)
CASE 318−08
ISSUE AN
q
0.25
c
5
SCALE 10:1
NOTES:
0.037
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD
0.95
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
318−08.
STYLE 6:
DIM
A1
H
PIN 1. BASE
L1
A
b
c
D
E
e
L
0.079
E
2.0
2. EMITTER
3. COLLECTOR
inches
mm
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.047
0.070
0.004
0.014
0.083
0.110
MIN
MMBT6428LT1/D
INCHES
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
NOM
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
MAX