MPSA13RLRAG ON Semiconductor, MPSA13RLRAG Datasheet - Page 2

• Manufacturer Part Number: MPSA13RLRAG
• Description: TRANS NPN DARL SS 30V TO92
• Manufacturer: ON Semiconductor

Specifications of MPSA13RLRAG

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 125MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 0.5 A
• Dc Collector/base Gain Hfe Min: 5000
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MPSA13RLRAGOS; MPSA13RLRAGOS; MPSA13RLRAGOSTR

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
2. f
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL−SIGNAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector −Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter On Voltage
Current−Gain − Bandwidth Product (Note 2)
MPSA13
MPSA13G
MPSA13RLRA
MPSA13RLRAG
MPSA13RLRMG
MPSA13RLRPG
MPSA13ZL1G
MPSA14G
MPSA14RLRAG
MPSA14RLRPG
T
= |h
(I
(V
(V
(I
(I
(I
(I
(I
C
C
C
C
C
C
CB
EB
fe
= 100 mAdc, I
= 10 mAdc, V
= 100 mAdc, V
= 100 mAdc, I
= 100 mAdc, V
= 10 mAdc, V
| S f
= 10 Vdc, I
= 30 Vdc, I
test
.
C
Device
E
B
CE
CE
B
= 0)
= 0)
CE
CE
= 0)
= 0.1 mAdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 100 MHz)
= 5.0 Vdc)
= 5.0 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
MPSA13, MPSA14
http://onsemi.com
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
2
MPSA13
MPSA14
MPSA13
MPSA14
V
Symbol
V
V
(BR)CES
I
I
CE(sat)
BE(on)
h
CBO
EBO
f
FE
T
10,000
10,000
20,000
5,000
Min
125
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Ammo Pack
2000 / Ammo Pack
2000 / Ammo Pack
2000 / Tape & Reel
2000 / Ammo Pack
30
5000 Units / Bulk
5000 Units / Bulk
5000 Units / Bulk
−
−
−
−
Shipping
Max
100
100
1.5
2.0
−
−
−
−
−
−
†
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
−