BCP53T1G ON Semiconductor, BCP53T1G Datasheet - Page 2

• Manufacturer Part Number: BCP53T1G
• Description: TRANS PNP AUDIO 1.5A80V SOT223
• Manufacturer: ON Semiconductor
• Type: PNPr

Specifications of BCP53T1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 150mA, 2V
• Power - Max: 1.5W
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 1.5A
• Dc Current Gain (min): 25
• Power Dissipation: 1.5W
• Frequency (max): 50MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Package: 4SOT-223
• Supplier Package: SOT-223
• Minimum Dc Current Gain: 25@5mA@2V|40@150mA@2V|25@500mA@2V
• Maximum Operating Frequency: 50(Typ) MHz
• Maximum Dc Collector Current: 1.5 A
• Maximum Collector Emitter Saturation Voltage: 0.5@50mA@500mA V
• Maximum Collector Base Voltage: 100 V
• Maximum Collector Emitter Voltage: 80 V
• Maximum Emitter Base Voltage: 5 V
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1.5 A
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 25 at 5 mA at 2 V
• Minimum Operating Temperature: - 65 C
• Current, Collector: 1.5 A
• Current, Gain: 25
• Frequency: 50 MHz
• Polarity: PNP
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: -80 V
• Voltage, Collector To Base: -100 V
• Voltage, Collector To Emitter: -80 V
• Voltage, Collector To Emitter, Saturation: -0.5 V
• Voltage, Emitter To Base: -5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: BCP53T1GOSTR

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector‐Base Breakdown Voltage (I
Collector‐Emitter Breakdown Voltage (I
Collector‐Emitter Breakdown Voltage (I
Emitter‐Base Breakdown Voltage (I
Collector‐Base Cutoff Current (V
Emitter‐Base Cutoff Current (V
DC Current Gain (I
Collector‐Emitter Saturation Voltage (I
Base‐Emitter On Voltage (I
Current‐Gain - Bandwidth Product
(I
(I
(I
C
C
C
= -150 mAdc, V
= - 500 mAdc, V
= -10 mAdc, V
C
CE
= - 5.0 mAdc, V
CE
CE
= - 5.0 Vdc, f = 35 MHz)
= - 2.0 Vdc)
= - 2.0 Vdc) All Part Types
C
Characteristics
= - 500 mAdc, V
EB
CB
= - 5.0 Vdc, I
E
= - 30 Vdc, I
CE
C
= -10 μAdc, I
C
= -100 μAdc, I
C
C
= - 2.0 Vdc) All Part Types
= - 500 mAdc, I
(T
= -1.0 mAdc, I
= -100 μAdc, R
A
= 25°C unless otherwise noted)
CE
C
E
= - 2.0 Vdc)
= 0)
= 0)
C
= 0)
E
= 0)
B
B
BE
= 0)
= - 50 mAdc)
BCP53 Series
BCP53-10
BCP53-16
= 1.0 kohm)
BCP53
2
V
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)CER
(BR)EBO
CE(sat)
I
I
BE(on)
CBO
h
EBO
f
FE
T
-100
-100
- 5.0
Min
- 80
100
25
40
63
25
-
-
-
-
-
Typ
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-100
Max
- 0.5
-1.0
-10
250
160
250
-
-
-
-
-
-
-
nAdc
μAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
-