BCP53T1G ON Semiconductor, BCP53T1G Datasheet - Page 3

• Manufacturer Part Number: BCP53T1G
• Description: TRANS PNP AUDIO 1.5A80V SOT223
• Manufacturer: ON Semiconductor
• Type: PNPr

Specifications of BCP53T1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 150mA, 2V
• Power - Max: 1.5W
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 1.5A
• Dc Current Gain (min): 25
• Power Dissipation: 1.5W
• Frequency (max): 50MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Package: 4SOT-223
• Supplier Package: SOT-223
• Minimum Dc Current Gain: 25@5mA@2V|40@150mA@2V|25@500mA@2V
• Maximum Operating Frequency: 50(Typ) MHz
• Maximum Dc Collector Current: 1.5 A
• Maximum Collector Emitter Saturation Voltage: 0.5@50mA@500mA V
• Maximum Collector Base Voltage: 100 V
• Maximum Collector Emitter Voltage: 80 V
• Maximum Emitter Base Voltage: 5 V
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1.5 A
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 25 at 5 mA at 2 V
• Minimum Operating Temperature: - 65 C
• Current, Collector: 1.5 A
• Current, Gain: 25
• Frequency: 50 MHz
• Polarity: PNP
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: -80 V
• Voltage, Collector To Base: -100 V
• Voltage, Collector To Emitter: -80 V
• Voltage, Collector To Emitter, Saturation: -0.5 V
• Voltage, Emitter To Base: -5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: BCP53T1GOSTR

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector−Base Breakdown Voltage (I
Collector−Emitter Breakdown Voltage (I
Collector−Emitter Breakdown Voltage (I
Emitter−Base Breakdown Voltage (I
Collector−Base Cutoff Current (V
Emitter−Base Cutoff Current (V
DC Current Gain (I
Collector−Emitter Saturation Voltage (I
Base−Emitter On Voltage (I
Current−Gain − Bandwidth Product
(I
(I
(I
C
C
C
= −150 mAdc, V
= − 500 mAdc, V
= −10 mAdc, V
C
CE
= − 5.0 mAdc, V
CE
CE
= − 5.0 Vdc, f = 35 MHz)
= − 2.0 Vdc)
= − 2.0 Vdc) All Part Types
C
Characteristics
= − 500 mAdc, V
EB
CB
= − 5.0 Vdc, I
E
= − 30 Vdc, I
CE
C
= −10 mAdc, I
C
= −100 mAdc, I
C
C
= − 2.0 Vdc) All Part Types
= − 500 mAdc, I
(T
= −1.0 mAdc, I
= −100 mAdc, R
A
= 25°C unless otherwise noted)
CE
C
E
= − 2.0 Vdc)
= 0)
= 0)
C
= 0)
E
= 0)
B
B
BE
http://onsemi.com
= − 50 mAdc)
= 0)
= 1.0 kW)
BCP53−10
BCP53−16
BCP53
2
V
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)CER
(BR)EBO
CE(sat)
I
I
BE(on)
h
CBO
EBO
f
FE
T
−100
−100
−5.0
−80
Min
100
25
40
63
25
−
−
−
−
−
Typ
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−100
−0.5
Max
−1.0
−10
250
160
250
−
−
−
−
−
−
−
nAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
−