PZTA92T1G ON Semiconductor, PZTA92T1G Datasheet - Page 2

• Manufacturer Part Number: PZTA92T1G
• Description: TRANS SS PNP 50MA 300V SOT223
• Manufacturer: ON Semiconductor

Specifications of PZTA92T1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 10V
• Power - Max: 1.5W
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: - 0.05 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 1.5 W
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 25 at 1 mA at 10 V
• Number Of Elements: 1
• Collector-emitter Voltage: 300V
• Collector-base Voltage: 300V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 50mA
• Dc Current Gain (min): 25
• Frequency (max): 50MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Dc: 1033
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: PZTA92T1GOSTR

2. Pulse Test Conditions, t
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Saturation Voltages
Collector−Base Capacitance @ f = 1.0 MHz (V
Current−Gain — Bandwidth Product
300
250
200
150
100
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
50
C
C
E
C
C
C
C
C
C
0
CB
BE
0.1
= −100 mAdc, I
= −1.0 mAdc, I
= −100 mAdc, I
= −1.0 mAdc, V
= −10 mAdc, V
= −30 mAdc, V
= −20 mAdc, I
= −20 mAdc, I
= −10 mAdc, V
= −200 Vdc, I
= −3.0 Vdc, I
B
B
C
B
E
C
CE
CE
CE
E
CE
= −2.0 mAdc)
= −2.0 mAdc)
= 0)
= 0)
= 0)
= 0)
= 0)
= −10 Vdc)
= −10 Vdc)
= − 20 Vdc, f = 100 MHz)
= −10 Vdc)
p
= 300 ms,
Characteristics
d
0.02.
T
J
= +125°C
25°C
-55°C
A
= 25°C unless otherwise noted)
CB
1.0
= −20 Vdc, I
Figure 1. DC Current Gain
I
C
http://onsemi.com
, COLLECTOR CURRENT (mA)
E
= 0)
2
V
V
V
10
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
I
h
C
CBO
EBO
f
FE
T
cb
−300
−300
−5.0
Min
25
40
40
50
—
—
—
—
—
−0.25
−0.5
−0.9
Max
−0.1
6.0
—
—
—
—
—
—
—
V
CE
= 10 Vdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
pF
—
100