MMBT6517LT1G ON Semiconductor, MMBT6517LT1G Datasheet - Page 14
MMBT6517LT1G
Manufacturer Part Number
MMBT6517LT1G
Description
TRANS SS NPN 350V HV SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMBT6517LT1G.pdf
(5 pages)
Specifications of MMBT6517LT1G
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
350V
Vce Saturation (max) @ Ib, Ic
1V @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 50mA, 10V
Power - Max
225mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
350 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
225 mW
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
20 at 0.1 mA at 10 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT6517LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT6517LT1G
Manufacturer:
ON
Quantity:
36 000
Company:
Part Number:
MMBT6517LT1G
Manufacturer:
ON
Quantity:
3 000
Company:
Part Number:
MMBT6517LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBT6517LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Product Bulletin #16134
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Issue Date: 11 Jul 2008
Rev.07-02-06
Page 14 of 14