NSS12200WT1G ON Semiconductor, NSS12200WT1G Datasheet - Page 3

• Manufacturer Part Number: NSS12200WT1G
• Description: TRANSISTOR PNP 2A 12V SC-88
• Manufacturer: ON Semiconductor

Specifications of NSS12200WT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 12V
• Vce Saturation (max) @ Ib, Ic: 290mV @ 20mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 800mA, 1.5 V
• Power - Max: 450mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NSS12200WT1G

Figure 1. Collector Emitter Voltage vs. Base Current
400
300
200
100
1.0
0.9
0.8
0.7
0.6
0.4
0.3
0.2
0.5
0.1
0
0
1
0.001
Figure 5. Base Emitter Saturation Voltage vs.
0.001
125°C
T
25°C
A
Figure 3. DC Current Gain vs. Collector
I
C
= −55°C
= 100 mA
I
I
C
C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
I
0.01
0.01
B
, BASE CURRENT (mA)
Base Current
Current
10
500 mA
800 mA
0.1
0.1
1 A
I
C
/I
B
2 A
= 10
V
CE
I
C
/I
= 1.5 V
B
100
= 100
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1
1
3
Figure 2. Collector Emitter Voltage vs. Collector Current
0.01
0.5
0.4
0.3
0.2
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.1
10
0
1
0.001
0.001
0.1
T
125°C
A
25°C
Figure 4. Base Emitter Voltage vs. Collector
SINGLE PULSE T
V
= −55°C
dc
CE
, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 6. Safe Operating Area
I
I
C
C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
0.01
0.01
1 s
A
= 25°C
100 ms
Current
1
0.1
0.1
10 ms
I
C
/I
B
I
C
V
= 100
/I
CE
B
= 10
1 ms
= 1.5 V
10
1
1