2SD1824GSL Panasonic - SSG, 2SD1824GSL Datasheet

TRANS NPN 100VCEO 20MA SMINI-3

2SD1824GSL

Manufacturer Part Number
2SD1824GSL
Description
TRANS NPN 100VCEO 20MA SMINI-3
Manufacturer
Panasonic - SSG
Datasheet

Specifications of 2SD1824GSL

Transistor Type
NPN
Current - Collector (ic) (max)
20mA
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
200mV @ 1mA, 10mA
Current - Collector Cutoff (max)
1µA
Dc Current Gain (hfe) (min) @ Ic, Vce
600 @ 2mA, 10V
Power - Max
150mW
Frequency - Transition
90MHz
Mounting Type
Surface Mount
Package / Case
S-Mini 3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SD1824GSLTR
Transistors
2SD1824G
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
• High forward current transfer ratio h
• Low collector-emitter saturation voltage V
• High emitter-base voltage (Collector open) V
• S-Mini type package, allowing downsizing of the equipment
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
and automatic insertion through the tape packing and the maga-
zine packing.
2. * : Rank classification
Parameter
Rank
Parameter
h
FE
This product complies with the RoHS Directive (EU 2002/95/EC).
400 to 800
*
R
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
FE
T
V
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
I
I
600 to 1 200
stg
C
CE(sat)
C
h
CBO
j
CEO
f
CBO
CEO
EBO
= 25°C
FE
T
CE(sat)
S
−55 to +150
EBO
Rating
I
I
I
V
V
V
I
V
C
C
E
C
100
100
150
150
CB
CE
CE
CB
15
20
50
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 10 mA, I
SJC00376AED
= 60 V, I
= 10 V, I
= 60 V, I
= 10 V, I
B
C
E
Conditions
Unit
B
mW
B
C
E
E
mA
mA
= 0
°C
°C
= 0
= 0
V
V
V
= 1 mA
= 0
= 0
= 2 mA
= −2 mA, f = 200 MHz
■ Package
• Code
• Marking Symbol: 1V
• Pin Name
SMini3-F2
1: Base
2: Emitter
3: Collector
Min
100
100
400
15
0.05
Typ
90
1 200
Max
0.20
0.1
1
MHz
Unit
µA
µA
V
V
V
V
1

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