2N4403G ON Semiconductor, 2N4403G Datasheet - Page 2

• Manufacturer Part Number: 2N4403G
• Description: TRANS PNP GP 40V 600MA TO-92
• Manufacturer: ON Semiconductor
• Type: General Purposer

Specifications of 2N4403G

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 30 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 600 mA
• Current, Gain: 20
• Frequency: 200 MHz
• Package Type: TO-92
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 40 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Collector To Emitter, Saturation: 0.75 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N4403G; 2N4403GOS

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector−Emitter Breakdown Voltage (Note 1)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage (Note 1)
Base−Emitter Saturation Voltage (Note 1)
Current−Gain − Bandwidth Product
Collector−Base Capacitance
Emitter−Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small−Signal Current Gain
Output Admittance
Delay Time
Rise Time
Storage Time
Fall Time
2N4403
2N4403G
2N4403RLRA
2N4403RLRAG
2N4403RLRM
2N4403RLRMG
2N4403RLRPG
Device
(V
I
(V
I
C
B1
CC
CC
= 150 mAdc, I
= 15 mA, I
= 30 Vdc, V
= 30 Vdc, I
Characteristic
(T
B2
A
= 25°C unless otherwise noted)
(I
C
B1
(I
(I
(I
(I
= 15 mA)
C
BE
C
C
C
C
= 150 mAdc,
(I
(I
= 20 mAdc, V
= 15 mAdc)
= 1.0 mAdc, V
= 1.0 mAdc, V
= 1.0 mAdc, V
= 1.0 mAdc, V
C
C
= + 2.0 Vdc,
= 150 mAdc, V
= 500 mAdc, V
(V
(V
EB
CB
(I
(I
(V
(I
(I
(I
(I
(V
(I
= 0.5 Vdc, I
C
C
= 10 Vdc, I
C
C
C
C
C
CE
CE
= 0.1 mAdc, V
= 1.0 mAdc, V
= 150 mAdc, I
= 500 mAdc, I
= 150 mAdc, I
= 500 mAdc, I
= 10 mAdc, V
CE
= 35 Vdc, V
= 35 Vdc, V
CE
CE
CE
CE
2N4403
= 10 Vdc, f = 100 MHz)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
(I
(I
(I
CE
CE
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
C
C
E
2
= 1.0 mAdc, I
= 0.1 mAdc, I
= 0.1 mAdc, I
= 2.0 Vdc) (Note 1)
= 2.0 Vdc) (Note 1)
C
E
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
EB
CE
CE
CE
B
B
B
B
EB
= 15 mAdc)
= 50 mAdc)
= 15 mAdc)
= 50 mAdc)
= 0.4 Vdc)
= 0.4 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
B
E
C
= 0)
= 0)
= 0)
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
I
BE(sat)
I
C
h
C
BEV
CEX
h
h
h
h
f
t
t
FE
t
t
oe
T
eb
re
d
cb
ie
fe
r
s
f
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Ammo Pack
2000 / Ammo Pack
2000 / Ammo Pack
5000 Units / Bulk
5000 Units / Bulk
1.5 k
0.75
Min
100
100
200
5.0
0.1
1.0
40
40
30
60
20
60
Shipping
−
−
−
−
−
−
−
−
−
−
−
†
Max
0.75
0.95
15 k
300
500
100
225
0.1
0.1
0.4
1.3
8.5
8.0
30
15
20
30
−
−
−
−
−
−
−
−
X 10
mmhos
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
ns
ns
ns
ns
W
−
−
−4