2N4403G ON Semiconductor, 2N4403G Datasheet - Page 4

• Manufacturer Part Number: 2N4403G
• Description: TRANS PNP GP 40V 600MA TO-92
• Manufacturer: ON Semiconductor
• Type: General Purposer

Specifications of 2N4403G

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 30 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 600 mA
• Current, Gain: 20
• Frequency: 200 MHz
• Package Type: TO-92
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 40 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Collector To Emitter, Saturation: 0.75 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N4403G; 2N4403GOS

100
7.0
5.0
70
50
30
20
10
10
8
6
4
2
0
0.01 0.02 0.05
10
20
Figure 8. Frequency Effects
0.1
I
Figure 5. Turn−On Time
30
C
, COLLECTOR CURRENT (mA)
I
I
I
I
0.2
C
C
C
C
= 1.0 mA, R
= 500 mA, R
= 50 mA, R
= 100 mA, R
f, FREQUENCY (kHz)
R
S
50
= OPTIMUM SOURCE RESISTANCE
0.5
70
1.0
S
S
S
S
= 2.7 kW
= 430 W
= 560 W
= 1.6 kW
2.0 5.0
100
200
100
70
50
30
20
V
t
t
t
t
r
r
d
d
SMALL−SIGNAL CHARACTERISTICS
CE
10
@ V
@ V
@ V
@ V
10
= −10 Vdc, T
200
CC
CC
I
BE(off)
BE(off)
C
/I
= 30 V
= 10 V
B
20
= 10
= 2 V
= 0
300
I
t
20
B1
s
′ = t
http://onsemi.com
= I
50
s
B2
I
NOISE FIGURE
− 1/8 t
C
Figure 7. Storage Time
30
500
, COLLECTOR CURRENT (mA)
A
100
2N4403
= 25°C; Bandwidth = 1.0 Hz
f
4
50
I
100
C
7.0
10
5.0
70
70
50
30
20
10
/I
6
4
2
0
8
B
50
10
= 20
100
100
Figure 9. Source Resistance Effects
f = 1 kHz
I
20
200
C
/I
200
B
R
= 10
S
I
30
C
, SOURCE RESISTANCE (OHMS)
I
, COLLECTOR CURRENT (mA)
C
500
Figure 6. Rise Time
300
= 50 mA
100 mA
500 mA
1.0 mA
50
1 k
500
70 100
2 k
5 k
10 k 20 k
V
I
200
C
CC
/I
B
= 30 V
= 10
300
50 k
500