BCX17,215 NXP Semiconductors, BCX17,215 Datasheet - Page 4

• Manufacturer Part Number: BCX17,215
• Description: TRANS PNP 500MA 45V SOT23
• Manufacturer: NXP Semiconductors

Specifications of BCX17,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 620mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 80MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 80 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1640-2; 933209620215; BCX17 T/R

NXP Semiconductors
CHARACTERISTICS
T
Note
1. V
2004 Jan 16
I
I
h
V
V
C
f
SYMBOL
j
CBO
EBO
T
FE
= 25 °C unless otherwise specified.
CEsat
BE
PNP general purpose transistors
c
BE
decreases by approximately −2 mV/°C with increasing temperature.
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
PARAMETER
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
E
C
= 0; V
= 0; V
= I
= 0; V
= −100 mA; V
= −300 mA; V
= −500 mA; V
= −500 mA; I
= −500 mA; V
= −10 mA; V
e
= 0; V
CB
CB
EB
4
= −20 V
= −20 V; T
= −5 V
CB
CONDITIONS
CE
B
= −10 V; f = 1 MHz
CE
CE
CE
CE
= −50 mA
= −5 V; f = 100 MHz
= −1 V
= −1 V
= −1 V
= −1 V; note 1
j
= 150 °C
−
−
−
100
70
40
−
−
−
80
MIN. TYP. MAX. UNIT
BCX17; BCX18
−
−
−
−
−
−
−
−
9
−
Product data sheet
−100
−5
−100
600
−
−
−620
−1.2
−
−
nA
μA
nA
mV
V
pF
MHz