MPSW01AG ON Semiconductor, MPSW01AG Datasheet - Page 2
MPSW01AG
Manufacturer Part Number
MPSW01AG
Description
TRANS NPN SS HC 1W 40V TO92
Manufacturer
ON Semiconductor
Type
High Currentr
Specifications of MPSW01AG
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 100mA, 1V
Power - Max
1W
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Long Body), TO-226
Current, Collector
1000 mA
Current, Gain
50
Frequency
50 MHz
Package Type
TO-92
Polarity
NPN
Power Dissipation
2.5 W
Primary Type
Si
Resistance, Thermal, Junction To Case
50 °C/W
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
50 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
MPSW01AGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MPSW01AG
Manufacturer:
ON Semiconductor
Quantity:
500
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL− SIGNAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector −Emitter Breakdown Voltage (Note 1)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base−Emitter On Voltage
Current −Gain — Bandwidth Product
Output Capacitance
MPSW01
MPSW01G
MPSW01A
MPSW01AG
MPSW01ARLRA
MPSW01ARLRAG
MPSW01ARLRP
MPSW01ARLRPG
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(V
C
C
E
C
C
C
C
C
C
CB
CB
EB
CB
= 100 mAdc, I
= 10 mAdc, I
= 100 mAdc, I
= 10 mAdc, V
= 100 mAdc, V
= 1000 mAdc, V
= 1000 mAdc, I
= 1000 mAdc, V
= 50 mAdc, V
= 3.0 Vdc, I
= 30 Vdc, I
= 40 Vdc, I
= 10 Vdc, I
B
E
E
E
E
C
C
CE
CE
= 0)
= 0)
= 0)
= 0, f = 1.0 MHz)
CE
= 0)
= 0)
B
= 0)
CE
CE
= 1.0 Vdc)
= 10 Vdc, f = 20 MHz)
= 100 mAdc)
Device
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
MPSW01, MPSW01A
2
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
MPSW01
MPSW01A
MPSW01
MPSW01A
MPSW01
MPSW01A
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
C
I
BE(on)
h
CBO
EBO
f
obo
FE
T
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Ammo Box
2000 / Ammo Box
5000 Units / Bulk
5000 Units / Bulk
5000 Units / Bulk
5000 Units / Bulk
Shipping
Min
5.0
30
40
40
50
55
60
50
50
−
−
−
−
−
−
†
Max
0.1
0.1
0.1
0.5
1.2
20
−
−
−
−
−
−
−
−
−
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
−