MPS8599RLRAG ON Semiconductor, MPS8599RLRAG Datasheet - Page 6

• Manufacturer Part Number: MPS8599RLRAG
• Description: TRANS PNP GP SS 80V TO92
• Manufacturer: ON Semiconductor

Specifications of MPS8599RLRAG

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 150MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MPS8599RLRAGOS; MPS8599RLRAGOS; MPS8599RLRAGOSTR

−1.0
−1.4
−1.8
−2.2
−2.6
−3.0
2.0
1.6
1.2
0.8
0.4
0
0.02
0.2
Figure 17. Base−Emitter Temperature Coefficient
10 mA
I
C
Figure 15. Collector Saturation Region
=
R
qVB
0.05
0.5
FOR V
20 mA
0.1
1.0
I
C
=
I
BE
C
, COLLECTOR CURRENT (mA)
0.2
I
2.0
B
, BASE CURRENT (mA)
50 mA
I
C
=
NPN
0.5
5.0
−55°C TO 125°C
100 mA
1.0
10
I
C
NPN − MPS8099; PNP − MPS8599
=
2.0
20
5.0
50
200 mA
I
T
C
http://onsemi.com
J
=
= 25°C
100
10
200
20
6
−1.0
−1.4
−1.8
−2.2
−2.6
−3.0
2.0
1.6
1.2
0.8
0.4
0
0.02
Figure 18. Base−Emitter Temperature Coefficient
0.2
T
10 mA
J
I
C
= 25°C
R
Figure 16. Collector Saturation Region
=
qVB
0.05
0.5
FOR V
1.0
0.1
I
BE
C
, COLLECTOR CURRENT (mA)
20 mA
I
0.2
I
2.0
C
B
, BASE CURRENT (mA)
=
−55°C TO 125°C
PNP
0.5
5.0
50 mA
I
C
1.0
10
=
2.0
20
100 mA
I
C
=
5.0
50
200 mA
100
I
10
C
=
200
20