MPSA06G ON Semiconductor, MPSA06G Datasheet - Page 2
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MPSA06G
Manufacturer Part Number
MPSA06G
Description
TRANS NPN GP BIPO LP 80V TO-92
Manufacturer
ON Semiconductor
Type
Amplifierr
Specifications of MPSA06G
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
250mV @ 10mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
625mW
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage(max)
80V
Emitter-base Voltage (max)
4V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
100
Power Dissipation
625mW
Frequency (max)
100MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Configuration
Single
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
4 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100 at 10 mA at 1 V
Minimum Operating Temperature
- 55 C
Current, Collector
500 mA
Current, Gain
100
Frequency
100 MHz
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
0.25 V
Voltage, Emitter To Base
4 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MPSA06G
MPSA06GOS
MPSA06GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MPSA06G
Manufacturer:
ON
Quantity:
15 000
Part Number:
MPSA06G
Manufacturer:
ON/安森美
Quantity:
20 000
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. f
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base−Emitter On Voltage
Current −Gain − Bandwidth Product (Note 3)
+10 V
0
T
is defined as the frequency at which |h
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
t
C
E
C
C
C
C
C
C
r
CE
CB
CB
5.0 ms
= 3.0 ns
= 100 mAdc, I
= 1.0 mAdc, I
= 10 mAdc, V
= 100 mAdc, V
= 100 mAdc, I
= 100 mAdc, V
= 10 mA, V
= 100 mAdc, V
= 60 Vdc, I
= 60 Vdc, I
= 80 Vdc, I
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
CE
V
in
B
E
E
C
B
CE
B
= 2.0 V, f = 100 MHz)
5.0 mF
= 0)
= 0)
= 0)
CE
CE
CE
= 0)
= 0)
= 10 mAdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc, f = 100 MHz)
−1.0 V
NPN − MPSA05, MPSA06*; PNP − MPSA55, MPSA56*
TURN−ON TIME
100
100
R
Characteristic
B
(T
fe
A
| extrapolates to unity.
V
Figure 1. Switching Time Test Circuits
= 25°C unless otherwise noted)
CC
R
+40 V
L
* C
S
OUTPUT
t 6.0 pF
MPSA05, MPSA55
MPSA06, MPSA56
MPSA05, MPSA55
MPSA06, MPSA56
2
MPSA05
MPSA06
MPSA55
MPSA56
t
r
5.0 ms
= 3.0 ns
V
V
V
Symbol
V
V
in
(BR)CEO
(BR)EBO
I
CE(sat)
I
BE(on)
h
5.0 mF
CES
CBO
f
FE
T
+V
BB
TURN−OFF TIME
100
100
R
B
Min
100
100
100
4.0
60
80
50
−
−
−
−
−
V
CC
Max
0.25
0.1
0.1
0.1
1.2
R
+40 V
−
−
−
−
−
−
−
L
* C
S
OUTPUT
mAdc
mAdc
MHz
t 6.0 pF
Unit
Vdc
Vdc
Vdc
Vdc
−