BC847B-7-F Diodes Inc, BC847B-7-F Datasheet - Page 2

• Manufacturer Part Number: BC847B-7-F
• Description: TRANS BIPO NPN 300MW 45V SOT23-3
• Manufacturer: Diodes Inc

Specifications of BC847B-7-F

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 15nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Minimum Operating Temperature: - 65 C
• Collector Emitter Voltage V(br)ceo: 45V
• Transition Frequency Typ Ft: 300MHz
• Power Dissipation Pd: 300mW
• Dc Collector Current: 100mA
• Dc Current Gain Hfe: 330
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BC847B-7-F; BC847B-7-FDITR

Electrical Characteristics
Collector-Base Breakdown Voltage (Note 5)
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
(Note 3)
H-Parameters
Small Signal Current Gain
Input Impedance
Output Admittance
Reverse Voltage Transfer Ratio
Current Gain Group
DC Current Gain
Collector-Emitter Saturation Voltage (Note 5)
Base-Emitter Saturation Voltage (Note 5)
Base-Emitter Voltage (Note 5)
Collector-Cutoff Current (Note 5)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
DS11108 Rev. 22 - 2
5. Short duration pulse test used to minimize self-heating effect.
Characteristic
Current Gain Group A
Current Gain Group A
Current Gain Group A
Current Gain Group A
@T
(Note 5)
BC846, BC847
A
= 25°C unless otherwise specified
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
BC848
C
C
C
C
C
B
B
B
A
B
B
Symbol
V
V
V
V
V
V
www.diodes.com
C
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
I
I
I
I
BE(ON)
h
h
h
h
NF
h
h
h
h
h
h
CBO
CBO
h
h
h
CES
CES
CES
f
CBO
oe
oe
oe
FE
re
re
re
T
fe
fe
fe
ie
ie
ie
2 of 4
Min
110
200
420
580
100
80
50
30
65
45
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
5
1.5x10
2x10
3x10
Typ
220
330
600
180
290
520
200
700
900
660
300
2.7
4.5
8.7
3.0
18
30
60
90
—
—
—
—
—
—
—
—
—
—
—
—
—
2
-4
-4
-4
Max
220
450
800
250
600
700
770
5.0
15
15
15
15
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
MHz
Unit
mV
mV
mV
kΩ
kΩ
kΩ
µS
µS
µS
nA
nA
nA
nA
µA
dB
pF
—
—
—
—
—
—
—
V
V
V
I
I
I
V
f = 1.0kHz
V
I
I
I
I
V
V
V
V
V
V
V
V
f = 100MHz
V
V
R
f = 1.0kHz, Δf = 200Hz
C
C
E
C
C
C
C
CE
CE
CE
CE
CE
CE
CE
CB
CB
CE
CB
CE
S
= 1μA, I
= 10μA, I
= 10mA, I
= 10mA, I
= 100mA, I
= 10mA, I
= 100mA, I
= 2.0kΩ,
= 5.0V, I
= 5.0V, I
= 5.0V, I
= 5.0V, I
= 80V
= 50V
= 30V
= 40V
= 30V, T
= 5.0V, I
= 10V, f = 1.0MHz
= 5V, I
Test Condition
C
BC846A-BC848C
C
© Diodes Incorporated
B
= 0
B
B
B
= 200µA,
C
C
C
C
A
C
= 0
B
B
= 0
= 0.5mA
= 0.5mA
= 2.0mA,
= 2.0mA
= 2.0mA
= 10mA
= 150°C
= 10mA,
= 5.0mA
= 5.0mA