MPS8099G ON Semiconductor, MPS8099G Datasheet - Page 6
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MPS8099G
Manufacturer Part Number
MPS8099G
Description
TRANSISTOR NPN GP BIPO 80V TO-92
Manufacturer
ON Semiconductor
Type
Amplifierr
Specifications of MPS8099G
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Power - Max
625mW
Frequency - Transition
150MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
625 mW
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100 at 1 mA at 5 V
Minimum Operating Temperature
- 55 C
Current, Collector
500 mA
Current, Gain
75
Frequency
150 MHz
Package Type
TO-92
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
0.4 V
Voltage, Emitter To Base
5 V
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
80V
Emitter-base Voltage
5V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
100
Frequency (max)
150MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MPS8099G
MPS8099GOS
MPS8099GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MPS8099G
Manufacturer:
ON/安森美
Quantity:
20 000
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
2.0
1.6
1.2
0.8
0.4
0
0.02
0.2
Figure 17. Base−Emitter Temperature Coefficient
10 mA
I
C
Figure 15. Collector Saturation Region
=
R
qVB
0.5
0.05
FOR V
20 mA
0.1
1.0
I
C
=
I
BE
C
, COLLECTOR CURRENT (mA)
I
0.2
2.0
B
, BASE CURRENT (mA)
50 mA
I
C
=
NPN
0.5
5.0
100 mA
-55°C TO 125°C
1.0
10
I
C
=
2.0
20
5.0
50
200 mA
I
T
C
http://onsemi.com
J
=
= 25°C
100
10
200
20
6
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
2.0
1.6
1.2
0.8
0.4
0
0.02
Figure 18. Base−Emitter Temperature Coefficient
0.2
T
10 mA
J
I
C
= 25°C
R
Figure 16. Collector Saturation Region
=
qVB
0.05
0.5
FOR V
1.0
0.1
I
BE
C
, COLLECTOR CURRENT (mA)
20 mA
I
0.2
I
2.0
C
B
, BASE CURRENT (mA)
=
-55°C TO 125°C
PNP
0.5
5.0
50 mA
I
C
1.0
10
=
2.0
20
100 mA
I
C
=
5.0
50
200 mA
100
10
I
C
=
200
20