MPSA56G ON Semiconductor, MPSA56G Datasheet - Page 2
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MPSA56G
Manufacturer Part Number
MPSA56G
Description
TRANS PNP GP BIPO LP 80V TO-92
Manufacturer
ON Semiconductor
Type
Amplifierr
Specifications of MPSA56G
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
250mV @ 10mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
625mW
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Current, Collector
500 mA
Current, Gain
100
Frequency
100 MHz
Package Type
TO-92
Polarity
PNP
Power Dissipation
1.5 W
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
-80 V
Voltage, Collector To Emitter, Saturation
0.25 V
Voltage, Emitter To Base
4 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MPSA56G
MPSA56GOS
MPSA56GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MPSA56G
Manufacturer:
ON
Quantity:
21 400
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. f
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base−Emitter On Voltage
Current −Gain − Bandwidth Product (Note 3)
+10 V
0
T
is defined as the frequency at which |h
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
t
C
E
C
C
C
C
C
C
r
CE
CB
CB
5.0 ms
= 3.0 ns
= 100 mAdc, I
= 1.0 mAdc, I
= 10 mAdc, V
= 100 mAdc, V
= 100 mAdc, I
= 100 mAdc, V
= 10 mA, V
= 100 mAdc, V
= 60 Vdc, I
= 60 Vdc, I
= 80 Vdc, I
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
CE
V
in
B
E
E
C
B
CE
B
= 2.0 V, f = 100 MHz)
5.0 mF
= 0)
= 0)
= 0)
CE
CE
CE
= 0)
= 0)
= 10 mAdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc, f = 100 MHz)
−1.0 V
NPN − MPSA05, MPSA06*; PNP − MPSA55, MPSA56*
TURN−ON TIME
100
100
R
Characteristic
B
(T
fe
A
| extrapolates to unity.
V
Figure 1. Switching Time Test Circuits
= 25°C unless otherwise noted)
CC
R
+40 V
L
* C
S
OUTPUT
t 6.0 pF
MPSA05, MPSA55
MPSA06, MPSA56
MPSA05, MPSA55
MPSA06, MPSA56
2
MPSA05
MPSA06
MPSA55
MPSA56
t
r
5.0 ms
= 3.0 ns
V
V
V
Symbol
V
V
in
(BR)CEO
(BR)EBO
I
CE(sat)
I
BE(on)
h
5.0 mF
CES
CBO
f
FE
T
+V
BB
TURN−OFF TIME
100
100
R
B
Min
100
100
100
4.0
60
80
50
−
−
−
−
−
V
CC
Max
0.25
0.1
0.1
0.1
1.2
R
+40 V
−
−
−
−
−
−
−
L
* C
S
OUTPUT
mAdc
mAdc
MHz
t 6.0 pF
Unit
Vdc
Vdc
Vdc
Vdc
−