2N5088G ON Semiconductor, 2N5088G Datasheet - Page 3

• Manufacturer Part Number: 2N5088G
• Description: TRANS NPN GP SS 50MA 30V TO92
• Manufacturer: ON Semiconductor

Specifications of 2N5088G

• Transistor Type: NPN
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 100µA, 5V
• Power - Max: 625mW
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.05 A
• Maximum Dc Collector Current: 0.05 A
• Power Dissipation: 625 W
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 300 at 0.1 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N5088GOS

300
200
100
7.0
5.0
3.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
7.0
5.0
3.0
30
20
10
10
70
50
30
20
10
10
10 20
10 20
R
BANDWIDTH = 1.0 Hz
1.0 mA
S
20
≈ 0
3.0 mA
50 100 200
50 100 200
50 100 200
I
Figure 2. Effects of Frequency
C
Figure 6. Total Noise Voltage
= 10 mA
R
Figure 4. Noise Current
S
300 mA
, SOURCE RESISTANCE (OHMS)
10 mA
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
BANDWIDTH = 1.0 Hz
300 mA
500 1 k 2 k
500 1 k 2 k
500 1 k 2 k
1.0 mA
3.0 mA
100 mA
R
S
≈ 0
I
C
BANDWIDTH = 1.0 Hz
30 mA
100 mA
= 10 mA
5 k 10 k 20 k 50 k 100 k
300 mA
5 k 10 k 20 k 50 k 100 k
5 k 10 k 20 k 50 k 100 k
1.0 mA
I
3.0 mA
C
= 10 mA
10 mA
NOISE CHARACTERISTICS
(V
2N5088, 2N5089
CE
http://onsemi.com
100 Hz NOISE DATA
30 mA
NOISE VOLTAGE
= 5.0 Vdc, T
3
8.0
4.0
8.0
4.0
7.0
5.0
3.0
20
16
12
20
16
12
30
20
10
0
0
A
0.01 0.02
10
10 20
= 25°C)
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
Figure 3. Effects of Collector Current
R
50 100 200
Figure 5. Wideband Noise Figure
50 100 200
S
≈ 0
0.05 0.1
R
R
I
S
S
C
Figure 7. Noise Figure
, SOURCE RESISTANCE (OHMS)
, SOURCE RESISTANCE (OHMS)
, COLLECTOR CURRENT (mA)
BANDWIDTH = 10 Hz to 15.7 kHz
I
C
500 1 k 2 k
500 1 k 2 k
0.2
= 10 mA
0.5
f = 10 Hz
10 mA
100 mA
10 kHz
1.0
5 k 10 k 20 k 50 k 100 k
5 k 10 k 20 k 50 k 100 k
3.0 mA
500 mA
1.0 mA
2.0
30 mA
300 mA
I
100 Hz
C
100 kHz
= 1.0 mA
100 mA
5.0
1.0 kHz
10 mA
10