2N3904G ON Semiconductor, 2N3904G Datasheet - Page 5

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2N3904G

Manufacturer Part Number
2N3904G
Description
TRANS SS NPN GP 40V 200MA TO-92
Manufacturer
ON Semiconductor
Type
General Purposer
Datasheets

Specifications of 2N3904G

Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
625mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
625 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40 at 0.1 mA at 1 V
Minimum Operating Temperature
- 55 C
Current, Collector
200 mA
Current, Gain
30
Frequency
300 MHz
Package Type
TO-92
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
60 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
0.3 V
Voltage, Emitter To Base
6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N3904G
2N3904GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N3904G
Manufacturer:
ON
Quantity:
192 737
Part Number:
2N3904G
Manufacturer:
ON Semiconductor
Quantity:
3
7.0
5.0
3.0
2.0
1.0
500
300
200
100
500
300
200
100
10
30
20
10
70
50
30
20
10
70
50
7
5
7
5
0.1
1.0
1.0
I
C
/I
B
0.2 0.3 0.5 0.7
= 20
2.0 3.0
2.0 3.0
REVERSE BIAS VOLTAGE (VOLTS)
I
Figure 5. Turn −On Time
I
C
I
Figure 3. Capacitance
Figure 7. Storage Time
C
C
/I
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
5.0 7.0
5.0 7.0
B
= 10
1.0
10
10
C
ibo
t
C
d
2.0 3.0 5.0 7.0 10
obo
@ V
20
20
OB
TYPICAL TRANSIENT CHARACTERISTICS
= 0 V
30
30
t
50
50
I
r
C
@ V
/I
t′
I
B
B1
70
70
s
= 20
I
I
CC
C
= t
C
= I
/I
/I
100
100
2.0 V
B
B
s
20 30 40
= 3.0 V
B2
-
http://onsemi.com
= 10
= 10
15 V
40 V
1
/
8
t
f
200
200
T
T
J
J
5
= 25°C
= 125°C
5000
3000
2000
1000
500
300
200
100
500
300
200
100
700
500
300
200
100
70
50
30
20
10
70
50
30
20
10
70
50
7
5
7
5
1.0
1.0
1.0
V
I
C
CC
/I
B
2.0 3.0
2.0 3.0
= 40 V
2.0 3.0
= 10
I
I
C
C
I
C
Figure 4. Charge Data
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
5.0 7.0
5.0 7.0
I
Figure 6. Rise Time
5.0 7.0 10
C
Figure 8. Fall Time
/I
B
= 10
10
10
I
C
/I
B
20
20
20
Q
= 20
T
30
30
30
50
50
50 70 100
Q
V
I
V
I
70
70
B1
C
A
CC
CC
/I
B
= I
100
100
= 40 V
= 40 V
= 10
B2
200
200
200

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