2N3906G ON Semiconductor, 2N3906G Datasheet
2N3906G
Manufacturer Part Number
2N3906G
Description
TRANS SS PNP GP 40V 200MA TO-92
Manufacturer
ON Semiconductor
Type
General Purposer
Specifications of 2N3906G
Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
625mW
Frequency - Transition
250MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
250 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
60 at 0.1 mA at 1 V
Minimum Operating Temperature
- 55 C
Current, Collector
200 mA
Current, Gain
30
Frequency
250 MHz
Package Type
TO-92
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
40 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
0.4 V
Voltage, Emitter To Base
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N3906G
2N3906GOS
2N3906GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N3906G
Manufacturer:
ON Semiconductor
Quantity:
4
Part Number:
2N3906G
Manufacturer:
ON/安森美
Quantity:
20 000
2N3906
General Purpose
Transistors
PNP Silicon
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates Data in addition to JEDEC Requirements.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
Total Power Dissipation @ T
Total Device Dissipation @ T
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Pb−Free Packages are Available*
Derate above 25°C
Derate above 25°C
Characteristic
Rating
A
A
C
Preferred Device
= 60°C
= 25°C
= 25°C
(Note 1)
Symbol
Symbol
T
V
V
V
R
R
J
P
P
P
, T
CEO
CBO
EBO
I
qJC
qJA
C
D
D
D
stg
−55 to +150
Value
Max
83.3
200
625
250
200
5.0
5.0
1.5
40
40
12
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
CASE 29
STYLE 1
TO−92
(Note: Microdot may be in either location)
ORDERING INFORMATION
A
L
Y
W
G
STRAIGHT LEAD
MARKING DIAGRAM
BASE
BULK PACK
2
1 2
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
3
ALYWG
COLLECTOR
3906
2N
EMITTER
G
3
1
TAPE & REEL
AMMO PACK
BENT LEAD
1
2
3
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2N3906G Summary of contents
Page 1
... Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates Data in addition to JEDEC Requirements. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Symbol Value ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 2) Collector −Base Breakdown Voltage Emitter −Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector −Emitter Saturation Voltage Base −Emitter Saturation Voltage ...
Page 3
... ORDERING INFORMATION Device 2N3906 2N3906G 2N3906RL1 2N3906RL1G 2N3906RLRA 2N3906RLRAG 2N3906RLRM 2N3906RLRMG 2N3906RLRP 2N3906RLRPG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. +0.5 V 10.6 V Figure 1. Delay and Rise Time Equivalent Test Circuit < ...
Page 4
PACKAGE DIMENSIONS SEATING K PLANE SEATING K PLANE 2N3906 TO−92 (TO−226) CASE 29−11 ISSUE ...