BF720T1G ON Semiconductor, BF720T1G Datasheet - Page 3

• Manufacturer Part Number: BF720T1G
• Description: TRANS NPN 100MA 300V SOT223
• Manufacturer: ON Semiconductor

Specifications of BF720T1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 30mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 20V
• Power - Max: 1.5W
• Frequency - Transition: 60MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 300V
• Collector-base Voltage: 300V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 50
• Power Dissipation: 1.5W
• Frequency (max): 60MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: BF720T1GOSTR

100
120
100
1.0
0.1
10
80
60
40
20
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
0.1
0.1
0.1
1.0
V
R
Figure 4. “ON” Voltages
Figure 2. Capacitance
I
, REVERSE VOLTAGE (VOLTS)
C
, COLLECTOR CURRENT (mA)
1.0
C
cb
@ 1MHz
T
J
--55C
25C
= +125C
C
10
eb
@ 1MHz
10
100
1.0
Figure 1. DC Current Gain
I
C
http://onsemi.com
, COLLECTOR CURRENT (mA)
1000
100
3
80
70
60
50
40
30
20
10
1.0
2.0
Figure 3. Current- -Gain - - Bandwidth
3.0
10
I
C
, COLLECTOR CURRENT (mA)
5.0
7.0
10
V
V
V
V
V
V
V
V
V
BE(sat)
BE(sat)
BE(sat)
CE(sat)
CE(sat)
CE(sat)
BE(on)
BE(on)
BE(on)
20
@ 25C, V
@ 125C, V
@ --55C, V
@ 25C, I
@ 125C, I
@ --55C, I
@ 125C, I
@ --55C, I
@ 25C, I
30
V
CE
T
V
f = 20 MHz
J
CE
= 10 Vdc
C
C
CE
= 25C
C
C
C
C
/I
/I
CE
CE
50
/I
/I
B
/I
/I
= 20 V
B
= 10 V
B
B
B
B
= 10
= 10
= 10 V
= 10 V
= 10
= 10
= 10
= 10
70
100
100