2STF1360 STMicroelectronics, 2STF1360 Datasheet - Page 3

• Manufacturer Part Number: 2STF1360
• Description: TRANSISTOR NPN 80V 3A SOT-89
• Manufacturer: STMicroelectronics

Specifications of 2STF1360

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 150mA, 3A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 1A, 2V
• Power - Max: 1.4W
• Frequency - Transition: 130MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 60V
• Power Dissipation Pd: 1.4W
• Dc Collector Current: 3A
• Dc Current Gain Hfe: 280
• Transistor Case Style: SOT-89
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Transition Frequency Typ Ft: 130MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 497-5211-2

2
2.1
Figure 2.
Electrical characteristics
T
Table 4.
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Typical characteristics (curves)
DC current gain (V
V
V
CASE
Symbol
BE(sat)
V
CE(sat)
h
I
I
BE(on)
CBO
FE
EBO
t
f
t
t
t
d
s
T
r
f
(1)
= 25°C; unless otherwise specified.
(1)
(1)
Collector cut-off current
(I
Emitter cut-off current
(I
Base-emitter on voltage
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Resistive load
Delay time
Rise time
Storage time
Fall time
Transition frequency
Electrical characteristics
E
C
= 0)
= 0)
Parameter
CE
= 5 V)
Doc ID 11783 Rev 2
V
V
V
I
I
I
I
I
I
I
V
I
C
C
C
C
C
C
B(on)
C
CB
EB
CE
BE(off)
= 2 A
= 3 A
= 2 A
= 100
= 1 A
= 3 A
= 0.1 A
Figure 3.
= 6 V
= 80 V
= 2 V
Test conditions
= - I
= - 5 V
_
mA_
B(off)
__
_
I
I
I
I
_
V
C
B
B
B
V
= 300 mA
V
CE
V
= 100 mA
CC
= 100 mA
= 150 mA
= 100 mA
CE
DC current gain (V
CE
= 10 V
= 10 V
= 2 V
= 2 V
Min.
630
160
80
Typ.
650
130
180
620
130
0.9
CE
17
81
54
= 2 V)
Max.
100
100
730
300
500
400
100
720
1.2
20
65
MHz
Unit
mV
mV
mV
nA
nA
ns
ns
ns
ns
V
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