MJE371G ON Semiconductor, MJE371G Datasheet - Page 2

• Manufacturer Part Number: MJE371G
• Description: TRANS POWER PNP 4A 40V TO225AA
• Manufacturer: ON Semiconductor
• Type: Medium Powerr

Specifications of MJE371G

• Transistor Type: PNP
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 40V
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 1A, 1V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 4 V
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 4 A
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Current, Collector: 4 A
• Current, Gain: 40
• Package Type: TO-225
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 3.12 °C/W
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 40 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Emitter To Base: 4 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Vce Saturation (max) @ Ib, Ic: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MJE371GOS

5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
10
0.07
0.05
0.03
0.02
0.01
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
2.0
10
1.0
0.7
0.5
0.3
0.2
0.1
0.01
0.01
Figure 1. Active−Region Safe Operating Area
T
0.02
0.2
0.1
J
D = 0.5
0.05
0.02 0.03
= 150°C
V
150°C
0.02
CE
SINGLE PULSE
4.0
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.03
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ T
Figure 2. DC Current Gain
0.05
I
C
6.0
, COLLECTOR CURRENT (AMP)
0.01
0.05
−55 °C
0.1
8.0
10
0.1
T
J
0.2
= 25°C
C
0.3
= 25°C
0.2
5.0 ms
1.0 ms
20
dc
0.5
0.3
V
0.5
1.0
CE
= 1.0 Vdc
Figure 4. Thermal Response
40
100 ms
2.0
http://onsemi.com
1.0
t, TIME OR PULSE WIDTH (ms)
3.0
60
MJE371
4.0
2.0
2
3.0
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less then
the limitations imposed by second breakdown.
q
q
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
2.0
1.6
1.2
0.8
0.4
J(pk)
JC
JC
There are two limitations on the power handling ability of
The data of Figure 1 is based on T
0.005
0
(t) = r(t) q
5.0
= 3.12°C/W MAX
− T
C
0.01 0.02
= P
10
JC
(pk)
T
1
V
J
q
BE(sat)
= 25°C
JC
(t)
I
20
0.03
C
Figure 3. “On” Voltage
, COLLECTOR CURRENT (AMP)
@ I
0.05
C
V
/I
CE(sat)
B
= 10
50
0.1
@ I
P
(pk)
C
DUTY CYCLE, D = t
/I
0.2 0.3
100
B
= 10
t
1
V
BE(on)
t
2
0.5
J(pk)
200
@ V
= 150_C; T
1.0
CE
1
/t
= 1.0 V
500
2
2.0 3.0
C
− V
1000
4.0
J(pk)
C
CE
is