2N4923G ON Semiconductor, 2N4923G Datasheet - Page 4

• Manufacturer Part Number: 2N4923G
• Description: TRANS NPN GP 1A 80V HP TO225AA
• Manufacturer: ON Semiconductor
• Type: Medium Powerr

Specifications of 2N4923G

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 100mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 500mA, 1V
• Power - Max: 30W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage(max): 80V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 1A
• Dc Current Gain (min): 40
• Power Dissipation: 30W
• Frequency (max): 3MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-225
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 3 A
• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Frequency: 3 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 1 A
• Current, Gain: 10
• Frequency: 3 MHz
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 4.16 °C/W
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Collector To Base: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 0.6 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 2N4923GOS

7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
10
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
1.0
1.0
0.7
0.5
0.3
0.2
0.1
10
0.01
Figure 5. Active−Region Safe Operating Area
PULSE CURVES APPLY BELOW
0.01
SINGLE PULSE
0.2
0.1
0.05
2.0
D = 0.5
V
I
20
0.02 0.03 0.05
CE
C
/I
RATED V
SECOND BREAKDOWN
LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
T
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
B
3.0
J
= 10
T
T
I
t
= 150°C
B1
s
30
J
J
′ = t
= 25°C
= 150°C
I
= I
Figure 6. Storage Time
C
, COLLECTOR CURRENT (mA)
s
B2
CEO
5.0
− 1/8 t
50 70
7.0
I
C
f
/I
5.0 ms
B
= 20
0.1
10
100
dc
C
0.2 0.3
I
C
= 25°C
20
/I
200 300
B
= 20
1.0 ms
30
2N4921, 2N4922, 2N4923
0.5
50
500 700 1000
Figure 4. Thermal Response
100 ms
70
http://onsemi.com
1.0
100
2.0 3.0
t, TIME (ms)
4
q
q
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
JC
JC
J(pk)
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
T
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown.
(t) = r(t) q
= 4.16°C/W MAX
0.07
0.05
J(pk)
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
− T
5.0
10
C
= P
v 150_C. At high case temperatures, thermal
JC
(pk)
10
1
q
20
JC
(t)
I
C
30
20
/I
B
I
C
= 10
, COLLECTOR CURRENT (mA)
Figure 7. Fall Time
30
50 70
P
I
(pk)
C
50
/I
B
DUTY CYCLE, D = t
= 20
100
t
1
100
t
2
200 300
200 300
J(pk)
T
T
V
I
J
J
B1
CC
1
= 25°C
= 150°C
/t
= I
2
= 30 V
= 150_C; T
B2
500 700 1000
500
C
− V
1000
CE
C