2N4919G ON Semiconductor, 2N4919G Datasheet
2N4919G
Manufacturer Part Number
2N4919G
Description
TRANS PNP 60V BIPOLAR TO-225
Manufacturer
ON Semiconductor
Datasheet
1.2N4920G.pdf
(6 pages)
Specifications of 2N4919G
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
600mV @ 100mA, 1A
Current - Collector Cutoff (max)
500µA
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 500mA, 1V
Power - Max
30W
Frequency - Transition
3MHz
Mounting Type
Through Hole
Package / Case
TO-225-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2N4919G
2N4919GOS
2N4919GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N4919G
Manufacturer:
ON Semiconductor
Quantity:
201
2N4918 − 2N4920* Series
Medium−Power Plastic PNP
Silicon Transistors
designed for driver circuits, switching, and amplifier applications.
Features
1. The 1.0 A max I
2. Indicates JEDEC Registered Data for 2N4918 Series.
3. Recommend use of thermal compound for lowest thermal resistance.
**For additional information on our Pb−Free strategy and soldering details,
July, 2004 − Rev. 11
MAXIMUM RATINGS
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Base Current
Total Power Dissipation @ T
Operating and Storage Junction
Thermal Resistance,
These medium−power, high−performance plastic devices are
P
Pb−Free Package is Available**
Low Saturation Voltage − V
Excellent Power Dissipation Due to Thermopad Construction,
Excellent Safe Operating Area
Gain Specified to I
Complement to NPN 2N4921, 2N4922, 2N4923
Semiconductor Components Industries, LLC, 2004
3.0 A max value is based upon actual current−handling capability of the
device (See Figure 5).
D
(Note 1)
Derate above 25 C
Temperature Range
Junction−to−Case
= 30 W @ T
Characteristic
Rating
C
value is based upon JEDEC current gain requirements. The
C
= 25_C
C
= 1.0 A
Preferred Device
A
2N4918
2N4919
2N4920
2N4918
2N4919
2N4920
= 25 C
CE(sat)
(Note 3)
= 0.6 Vdc (Max) @ I
Symbol
Symbol
(Note 2)
T
qJC
V
V
V
J
P
, T
CEO
CBO
EBO
I
I
C
B
D
stg
−65 to +150
Max
4.16
Value
0.24
5.0
1.0
3.0
1.0
40
60
80
40
60
80
30
C
= 1.0 A
1
Unit
W/ C
C/W
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*Preferred devices are recommended choices for future
use and best overall value.
3
POWER TRANSISTORS
2
GENERAL PURPOSE
3.0 A, 40−80 V, 30 W
ORDERING INFORMATION
1
MARKING DIAGRAM
xx
Y
WW
http://onsemi.com
= 18, 19, 20
= Year
= Work Week
Publication Order Number:
YWW
2N
49xx
CASE 077
STYLE 1
TO−225
2N4918/D
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2N4919G Summary of contents
Page 1
... Thermal Resistance, Junction−to−Case 3. Recommend use of thermal compound for lowest thermal resistance. **For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 July, 2004 − Rev ...
Page 2
ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...
Page 3
V BE(off APPROX − << APPROX 9 < < 500 ms ...
Page 4
D = 0.5 0.5 0.3 0.2 0.2 0.1 0.05 0.1 0.07 0.01 0.05 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 10 5 150 C 2 1.0 SECOND ...
Page 5
T = 150 C J 300 200 25 C 100 70 − 2.0 3.0 5 100 200 300 500 I , COLLECTOR CURRENT (mA) C Figure 8. Current ...
Page 6
... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...