2N5192G ON Semiconductor, 2N5192G Datasheet

TRANS NPN PWR GP 4A 80V TO225AA

2N5192G

Manufacturer Part Number
2N5192G
Description
TRANS NPN PWR GP 4A 80V TO225AA
Manufacturer
ON Semiconductor
Type
Powerr
Datasheets

Specifications of 2N5192G

Transistor Type
NPN
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1.4V @ 1A, 4A
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 1.5A, 2V
Power - Max
40W
Frequency - Transition
2MHz
Mounting Type
Through Hole
Package / Case
TO-225-3
Current, Collector
4 A
Current, Gain
7
Frequency
2 MHz
Package Type
TO-225AA
Polarity
NPN
Power Dissipation
40 W
Primary Type
Si
Resistance, Thermal, Junction To Case
3.12 °C/W
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
1.4 V
Voltage, Emitter To Base
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2N5192GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N5192G
Manufacturer:
ON
Quantity:
19 782
2N5190, 2N5191, 2N5192
Silicon NPN Power
Transistors
switching circuits, — excellent safe area limits. Complement to PNP
2N5194, 2N5195.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 12
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Case
Silicon NPN power transistors are for use in power amplifier and
ESD Ratings: Machine Model, C; > 400 V
Epoxy Meets UL 94 V−0 @ 0.125 in.
Pb−Free Packages are Available*
Characteristic
Rating
Human Body Model, 3B; > 8000 V
C
= 25°C
2N5190
2N5191
2N5192
2N5190
2N5191
2N5192
Symbol
Symbol
T
V
V
V
R
J
CEO
CBO
P
, T
EBO
I
I
qJC
C
B
D
stg
–65 to +150
Value
Max
3.12
320
5.0
4.0
1.0
40
60
80
40
60
80
40
1
mW/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
°C
W
†For information on tape and reel specifications,
2N5190
2N5190G
2N5191
2N5191G
2N5192
2N5192G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
40, 60, 80 VOLTS − 40 WATTS
Device
POWER TRANSISTORS
3 2
ORDERING INFORMATION
Y
WW
2N519x = Device Code
G
1
MARKING DIAGRAM
4.0 AMPERES
http://onsemi.com
NPN SILICON
TO−225AA
TO−225AA
TO−225AA
TO−225AA
TO−225AA
TO−225AA
(Pb−Free)
(Pb−Free)
(Pb−Free)
= Year
= Work Week
= Pb−Free Package
Package
x = 0, 1, or 2
YWW
2
N519xG
Publication Order Number:
TO−225AA
CASE 77
STYLE 1
500 Units/Box
500 Units/Box
500 Units/Box
500 Units/Box
500 Units/Box
500 Units/Box
Shipping
2N5191/D

Related parts for 2N5192G

2N5192G Summary of contents

Page 1

... Units/Box 2N5191G TO−225AA 500 Units/Box (Pb−Free) 2N5192 TO−225AA 500 Units/Box 2N5192G TO−225AA 500 Units/Box (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: † ...

Page 2

ELECTRICAL CHARACTERISTICS* Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 0.1 Adc Collector Cutoff Current ( Vdc Vdc ...

Page 3

T = 150°C J 7.0 5.0 3.0 2.0 1.0 −55 °C 0.7 25°C 0.5 0.3 0.2 0.1 0.004 0.007 0.01 0.02 0.03 2 25°C J 1.6 1 100 mA C 0.8 0.4 0 ...

Page 4

150° 100°C 10 REVERSE −1 10 − 25°C − −0.4 −0.3 −0.2 −0.1 0 +0.1 +0.2 +0 BASE−EMITTER VOLTAGE ...

Page 5

T = 150°C J 2.0 dc 1.0 SECONDARY BREAKDOWN LIMIT 0.5 THERMAL LIMIT 25°C C BONDING WIRE LIMIT CURVES APPLY BELOW RATED V CEO 0.2 2N5191 2N5192 0.1 1.0 2.0 5 ...

Page 6

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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