2N6038G ON Semiconductor, 2N6038G Datasheet - Page 2

• Manufacturer Part Number: 2N6038G
• Description: TRANS DARL NPN 4A 60V TO225AA
• Manufacturer: ON Semiconductor
• Type: Power, Switchr

Specifications of 2N6038G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 4A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 750 @ 2A, 3V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Current, Gain: 100
• Current, Input: 100 mA
• Current, Output: 4 A
• Package Type: TO-225AA
• Polarity: NPN
• Power Dissipation: 40 W
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 83.3
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Input: 5 V
• Voltage, Output: 60 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 2N6038GOS

*Indicates JEDEC Registered Data.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector−Emitter Sustaining Voltage
Collector−Cutoff Current
Collector−Cutoff Current
Collector−Cutoff Current
Emitter−Cutoff Current (V
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Base−Emitter On Voltage
Small−Signal Current−Gain
Output Capacitance
(I
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(V
C
C
C
C
C
C
C
C
C
CE
CE
CE
CE
CE
CE
CE
CE
CE
CB
CB
CB
CB
= 100 mAdc, I
= 0.5 Adc, V
= 2.0 Adc, V
= 4.0 Adc, V
= 2.0 Adc, I
= 4.0 Adc, I
= 4.0 Adc, I
= 2.0 Adc, V
= 0.75 Adc, V
= 40 Vdc, I
= 60 Vdc, I
= 80 Vdc, I
= 40 Vdc, V
= 60 Vdc, V
= 80 Vdc, V
= 40 Vdc, V
= 60 Vdc, V
= 80 Vdc, V
= 40 Vdc, I
= 60 Vdc, I
= 80 Vdc, I
= 10 Vdc, I
B
B
B
CE
CE
CE
CE
B
B
B
E
E
E
E
= 8.0 mAdc)
= 40 mAdc)
= 40 mAdc)
CE
BE(off)
BE(off)
BE(off)
BE(off)
BE(off)
BE(off)
B
= 0)
= 0)
= 0)
= 0)
= 0)
= 0)
= 0, f = 0.1 MHz)
= 3.0 Vdc)
= 3.0 Vdc)
= 3.0 Vdc)
= 3.0 Vdc)
= 0)
= 10 Vdc, f = 1.0 MHz)
BE
= 1.5 Vdc)
= 1.5 Vdc)
= 1.5 Vdc)
= 1.5 Vdc, T
= 1.5 Vdc, T
= 1.5 Vdc, T
= 5.0 Vdc, I
Characteristic
C
C
C
C
= 125_C)
= 125_C)
= 125_C)
(T
= 0)
C
= 25_C unless otherwise noted)
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2N6034
2N6034
2N6034
V
Symbol
V
V
V
CEO(sus)
I
I
CE(sat)
BE(sat)
I
I
BE(on)
|h
h
C
CEO
CBO
EBO
CEX
FE
fe
ob
|
Min
500
750
100
40
60
80
25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
15,000
Max
100
100
100
100
100
100
500
500
500
200
100
0.5
0.5
0.5
2.0
2.0
3.0
4.0
2.8
−
−
−
−
−
−
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
Vdc
mA
mA
pF
−
−