2N5194G ON Semiconductor, 2N5194G Datasheet

2N5194G

Manufacturer Part Number

2N5194G

Description

TRANS PNP PWR GP 4A 60V TO225AA

Manufacturer

ON Semiconductor

Type

Powerr

Datasheets

1.2N5194G.pdf (6 pages)

2.2N5195G.pdf (3 pages)

Specifications of 2N5194G

Transistor Type

PNP

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

60V

Vce Saturation (max) @ Ib, Ic

1.4V @ 1A, 4A

Current - Collector Cutoff (max)

1mA

Dc Current Gain (hfe) (min) @ Ic, Vce

25 @ 1.5A, 2V

Power - Max

40W

Frequency - Transition

2MHz

Mounting Type

Through Hole

Package / Case

TO-225-3

Current, Collector

4 A

Current, Gain

Frequency

2 MHz

Package Type

TO-225AA

Polarity

PNP

Power Dissipation

40 W

Primary Type

Resistance, Thermal, Junction To Case

3.12 °C/W

Voltage, Breakdown, Collector To Emitter

60 V

Voltage, Collector To Base

60 V

Voltage, Collector To Emitter

60 V

Voltage, Collector To Emitter, Saturation

1.4 V

Voltage, Emitter To Base

5 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

2N5194GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N5194G

Manufacturer:

Quantity:

1 996

Current page: 1 of 3
Download datasheet (63Kb)

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2N5194, 2N5195

Silicon PNP Power

Transistors

circuits; excellent safe area limits. Complement to NPN 2N5191,

2N5192.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC registered data.

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current

Base Current

Total Device Dissipation @ T

Derate above 25°C

Operating and Storage Junction

Temperature Range

Thermal Resistance,

Junction−to−Case

These devices are designed for use in power amplifier and switching

Pb−Free Packages are Available*

Characteristic

Rating

(Note 1)

Preferred Devices

= 25°C

Î Î Î

Symbol

CEO

, T

stg

Î Î Î

Î Î Î Î Î Î

2N5194

– 65 to + 150

Î Î Î Î

Max

3.12

320

5.0

4.0

1.0

2N5195

Î Î Î Î

Î Î

Î Î Î Î

Î Î

W/°C

°C/W

Unit

Vdc

Adc

Preferred devices are recommended choices for future use

and best overall value.

2N5194

2N5194G

2N5195

2N5195G

Device

POWER TRANSISTORS

ORDERING INFORMATION

2N519x = Device Code

MARKING DIAGRAM

60 − 80 VOLTS

PNP SILICON

4 AMPERE

(Pb−Free)

Package

TO−225

= Year

= Work Week

= Pb−Free Package

YWW

N519xG

x = 4 or 5

CASE 77−09

TO−225AA

STYLE 1

500 Units / Bulk

Shipping

Related parts for 2N5194G

2N5194G Summary of contents

Page 1

... Work Week 2N519x = Device Code Pb−Free Package ORDERING INFORMATION Shipping Device Package 2N5194 TO−225 500 Units / Bulk 2N5194G TO−225 500 Units / Bulk (Pb−Free) 2N5195 TO−225 500 Units / Bulk 2N5195G TO−225 500 Units / Bulk (Pb−Free) Preferred devices are recommended choices for future use ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

PACKAGE DIMENSIONS −B− −A− 0.25 (0.010 0.25 (0.010 2N5194, 2N5195 TO−225 CASE 77−09 ISSUE ...

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