TIP100G ON Semiconductor, TIP100G Datasheet
TIP100G
Manufacturer Part Number
TIP100G
Description
TRANS BIPO NPN 8A 60V TO-220AB
Manufacturer
ON Semiconductor
Type
Medium Power, Switchr
Specifications of TIP100G
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
2.5V @ 80mA, 8A
Current - Collector Cutoff (max)
50µA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 3A, 4V
Power - Max
2W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
60 V
Maximum Dc Collector Current
8 A
Maximum Collector Cut-off Current
50 uA
Power Dissipation
40 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
4 A
Dc Collector/base Gain Hfe Min
200
Minimum Operating Temperature
- 65 C
Current, Gain
200
Current, Input
1 A
Current, Output
8 A
Package Type
TO-220AB
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Ambient
62.5
Voltage, Collector To Emitter, Saturation
2.5 V
Voltage, Input
2.8 V
Voltage, Output
60 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
TIP100G
TIP100GOS
TIP100GOS
TIP100, TIP101, TIP102
(NPN); TIP105, TIP106,
TIP107 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
applications.
Features
•
•
•
•
•
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Designed for general-purpose amplifier and low-speed switching
High DC Current Gain -
Collector-Emitter Sustaining Voltage - @ 30 mAdc
Low Collector-Emitter Saturation Voltage -
Monolithic Construction with Built-in Base-Emitter Shunt Resistors
Pb-Free Packages are Available*
TIP101, TIP102, TIP106 and TIP107 are Preferred Devices
h
V
V
FE
CEO(sus)
CE(sat)
= 2500 (Typ) @ I
= 4.0 Adc
= 2.0 Vdc (Max) @ I
= 3.0 Adc
= 2.5 Vdc (Max) @ I
= 60 Vdc (Min) - TIP100, TIP105
= 80 Vdc (Min) - TIP101, TIP106
= 100 Vdc (Min) - TIP102, TIP107
C
C
C
= 8.0 Adc
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
60-80-100 VOLTS, 80 WATTS
COMPLEMENTARY SILICON
2
3
DARLINGTON 8 AMPERE
POWER TRANSISTORS
TIP10x
x
A
Y
WW
G
ORDERING INFORMATION
4
CASE 221A
TO-220AB
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= Pb-Free Package
STYLE 1
MARKING
DIAGRAM
TIP10xG
AYWW
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TIP100G Summary of contents
Page 1
... Adc = 2.5 Vdc (Max • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • Pb-Free Packages are Available* *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/ 8.0 Adc C 1 DARLINGTON 8 AMPERE ...
Page 2
... Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability 1 mH, P.R. Hz ORDERING INFORMATION Device TIP100 TIP100G TIP101 TIP101G TIP102 TIP102G TIP105 TIP105G TIP106 TIP106G ...
Page 3
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...
Page 4
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI ...