MJE15033G ON Semiconductor, MJE15033G Datasheet - Page 3

• Manufacturer Part Number: MJE15033G
• Description: TRANS PWR PNP 8A 250V TO220AB
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJE15033G

• Transistor Type: PNP
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 2A, 5V
• Power - Max: 2W
• Frequency - Transition: 30MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 250 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 8 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 8 A
• Dc Collector/base Gain Hfe Min: 10
• Maximum Operating Frequency: 30 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 8 A
• Current, Gain: 10
• Frequency: 30 MHz
• Package Type: TO-220AB
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 2.5 °C/W
• Voltage, Breakdown, Collector To Emitter: 250 V
• Voltage, Collector To Base: 250 V
• Voltage, Collector To Emitter: 220 V
• Voltage, Collector To Emitter, Saturation: 0.5 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MJE15033GOS

0.01
100
1.0
0.1
10
0.07
0.05
0.03
0.02
0.01
1.0
1.0
0.7
0.5
0.3
0.2
0.1
0.01
0.01
Figure 2. MJE15032 & MJE15033
D = 0.5
V
0.02
CE
0.05
0.02
0.1
0.2
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
SINGLE PULSE
Safe Operating Area
10
0.05
250 ms
0.1
3.0
2.0
1.0
T
A
0
T
60
40
20
0.2
50 ms
C
0
MJE15032 (NPN), MJE15033 (PNP)
100
10 ms
0
100 ms
20
0.5
Figure 1. Thermal Response
Figure 3. Power Derating
40
http://onsemi.com
T, TEMPERATURE (°C)
1.0
1000
60
2.0
t, TIME (ms)
3
T
A
80
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
T
pulse limits are valid for duty cycles to 10% provided T
< 150_C. T
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
C
qJC(t)
J(pk)
qJC
There are two limitations on the power handling ability of
The data of Figures 2 and 4 is based on T
T
is variable depending on conditions. Second breakdown
5.0
C
= 2.5°C/W MAX
− T
100
= r(t) R
C
= P
10
qJC
J(pk)
(pk)
120
1
Z
qJC(t)
may be calculated from the data in Figure 1.
20
140
160
50
P
(pk)
DUTY CYCLE, D = t
100
t
1
t
2
200
J(pk)
1
/t
2
500 1.0 k
= 150_C;
C
− V
J(pk)
CE