MJE18008G ON Semiconductor, MJE18008G Datasheet - Page 3

• Manufacturer Part Number: MJE18008G
• Description: TRANS PWR NPN 8A 450V TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MJE18008G

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 900mA, 4.5V
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14 @ 1A, 5V
• Power - Max: 125W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 450 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 8 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 8 A
• Dc Collector/base Gain Hfe Min: 14
• Maximum Operating Frequency: 13 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJE18008GOS

100
1.5
0.5
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
0.4
10
1
0.01
2
1
0
0.01
1
0.01
T
T
J
J
T
T
T
T
= 125°C
J
J
= 25°C
J
J
Figure 5. Base−Emitter Saturation Region
= 125°C
= - 20°C
= 25°C
= 25°C
Figure 3. Collector Saturation Region
Figure 1. DC Current Gain @ 1 Volt
I
I
C
C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
I
C
I
B
0.1
0.1
0.1
= 1 A
, BASE CURRENT (AMPS)
3 A
5 A
TYPICAL STATIC CHARACTERISTICS
1
1
1
V
CE
8 A 10 A
= 1 V
I
I
C
C
/I
/I
B
B
= 5
= 10
http://onsemi.com
10
10
10
3
10000
1000
0.01
100
100
0.1
10
10
10
1
0.01
1
0.01
1
1
Figure 4. Collector−Emitter Saturation Voltage
I
T
T
C
I
T
C
J
J
/I
J
/I
= 125°C
= - 20°C
B
= 25°C
B
= 10
= 5
Figure 2. DC Current Gain @ 5 Volts
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
I
I
C
C
, COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
Figure 6. Capacitance
0.1
0.1
C
10
ib
100
1
1
V
C
CE
ob
= 5 V
T
T
T
f = 1 MHz
J
J
J
= 25°C
= 125°C
= 25°C
1000
10
10