MJF44H11G ON Semiconductor, MJF44H11G Datasheet

MJF44H11G

Manufacturer Part Number

MJF44H11G

Description

TRANS POWER NPN 10A 80V TO220FP

Manufacturer

ON Semiconductor

Type

Powerr

Datasheets

1.MJF44H11G.pdf (5 pages)

2.MJF44H11G.pdf (3 pages)

Specifications of MJF44H11G

Transistor Type

NPN

Current - Collector (ic) (max)

10A

Voltage - Collector Emitter Breakdown (max)

80V

Vce Saturation (max) @ Ib, Ic

1V @ 400mA, 8A

Current - Collector Cutoff (max)

1µA

Dc Current Gain (hfe) (min) @ Ic, Vce

40 @ 4A, 1V

Power - Max

Frequency - Transition

50MHz

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack (Straight Leads)

Transistor Polarity

NPN

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

80 V

Emitter- Base Voltage Vebo

5 V

Maximum Dc Collector Current

10 A

Power Dissipation

36 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

10 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

50 MHz

Minimum Operating Temperature

- 55 C

Current, Collector

10 A

Current, Gain

Frequency

50 MHz

Package Type

TO-220

Polarity

NPN

Primary Type

Resistance, Thermal, Junction To Case

3.5 °C/W

Voltage, Breakdown, Collector To Emitter

80 V

Voltage, Collector To Emitter

80 V

Voltage, Collector To Emitter, Saturation

1 V

Voltage, Emitter To Base

5 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MJF44H11GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJF44H11G

Manufacturer:

ON Semiconductor

Quantity:

1 500

Current page: 1 of 3
Download datasheet (96Kb)

Î Î Î Î Î Î Î Î Î Î Î Î

Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î

Î Î Î Î Î Î Î Î Î Î Î Î

MJF44H11 (NPN),

MJF45H11 (PNP)

Complementary

Power Transistors

For Isolated Package Applications

amplification and switching such as output or driver stages in

applications such as switching regulators, converters and power

amplifiers.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Voltage

Emitter−Base Voltage

Collector Current

Total Power Dissipation

Operating and Storage Junction

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Complementary power transistors are for general purpose power

Low Collector−Emitter Saturation Voltage −

Fast Switching Speeds

Complementary Pairs Simplifies Designs

Pb−Free Packages are Available*

@ T

Derate above 25°C

@ T

Derate above 25°C

Temperature Range

= 25°C

Characteristic

Rating

− Continuous

− Peak

CE(sat)

Preferred Devices

= 1.0 V (Max) @ 8.0 A

Î Î Î

Symbol

CEO

, T

qJC

qJA

stg

Î Î Î Î

−55 to 150

Value

0.016

1.67

Max

62.5

2.0

3.5

Î Î Î

W/°C

°C/W

Unit

Vdc

Adc

°C

Preferred devices are recommended choices for future use

and best overall value.

SILICON POWER TRANSISTORS

MJF44H11

MJF44H11G

MJF45H11

MJF45H11G

Device

F4xH11 = Specific Device Code

80 VOLTS, 36 WATTS

ORDERING INFORMATION

MARKING DIAGRAM

10 AMPERES

TO−220 FULLPACK

= Pb−Free Package

= Assembly Location

= Year

= Work Week

x = 4 or 5

(Pb−Free)

F4xH11G

Package

ISOLATED TO−220

AYWW

CASE 221D

STYLE 2

50 Units/Rail

Shipping

Related parts for MJF44H11G

MJF44H11G Summary of contents

Page 1

... Pb−Free Package A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION Device Package MJF44H11 TO−220 FULLPACK 50 Units/Rail MJF44H11G TO−220 FULLPACK 50 Units/Rail (Pb−Free) MJF45H11 TO−220 FULLPACK 50 Units/Rail MJF45H11G TO−220 FULLPACK 50 Units/Rail (Pb−Free) Preferred devices are recommended choices for future use and best overall value. ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 −B− −Y− 0.25 (0.010 ISSUE J NOTES: −T− SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI ...

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