MJW21193G ON Semiconductor, MJW21193G Datasheet - Page 4

• Manufacturer Part Number: MJW21193G
• Description: TRANS BIPO PNP 16A 250V TO247
• Manufacturer: ON Semiconductor

Specifications of MJW21193G

• Transistor Type: PNP
• Current - Collector (ic) (max): 16A
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 4V @ 3.2A, 16A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 8A, 5V
• Power - Max: 200W
• Frequency - Transition: 4MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 250 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 16 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 16 A
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Frequency: 4 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJW21193GOS

100
1.0
0.1
1.0
0.1
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.1
0
1.0
0.1
Figure 13. Active Region Safe Operating Area
V
T
I
T
C
CE
Figure 11. Typical Base−Emitter Voltage
J
/I
J
= 25°C
B
= 25°C
= 20 V (SOLID)
Figure 9. Typical Saturation Voltages
= 10
V
I
V
C
CE
BE(sat)
I
1.0
, COLLECTOR CURRENT (AMPS)
C
, COLLECTOR EMITTER (VOLTS)
, COLLECTOR CURRENT (AMPS)
1.0
10
PNP MJW21193
PNP MJW21193
PNP MJW21193
1 Sec
V
10
CE(sat)
10 mSec
V
CE
100
10
= 5 V (DASHED)
TYPICAL CHARACTERISTICS
100 mSec
http://onsemi.com
1000
100
100
4
100
1.0
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.1
10
10
0
0.1
0.1
1.0
Figure 14. Active Region Safe Operating Area
T
I
C
T
J
/I
J
Figure 12. Typical Base−Emitter Voltage
= 25°C
B
= 25°C
Figure 10. Typical Saturation Voltages
= 10
V
I
I
1.0
C
C
CE
V
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
CE
, COLLECTOR EMITTER (VOLTS)
= 20 V (SOLID)
1.0
10
NPN MJW21194
NPN MJW21194
NPN MJW21194
V
BE(sat)
1 Sec
V
CE(sat)
10
10 mSec
V
CE
100
10
= 5 V (DASHED)
100 mSec
1000
100
100