MPS6515 Fairchild Semiconductor, MPS6515 Datasheet
MPS6515
Manufacturer Part Number
MPS6515
Description
TRANSISTOR AMP NPN SS GP TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.MPS6515.pdf
(4 pages)
Specifications of MPS6515
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
500mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 2mA, 10V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
4 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
250
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MPS6515
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
©2003 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device is designed as a general purpose
• The useful dynamic range extends to 100mA as a
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
* Pulse Test: Pulse Width
Thermal Characteristics
* Device mounted on FR-4 PCB 1.6”
V
V
V
I
T
Off Characteristics
V
V
V
I
I
On Characteristics *
h
V
Small Signal Characteristics
C
P
R
R
C
CBO
CBO
amplifier and switch.
switch and to 100MHz as an amplifier.
FE
J
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
D
obo
Symbol
Symbol
, T
JC
JA
Symbol
stg
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
300 s, Duty Cycle
0.06"
Parameter
2.0%
MPS6515/MMBT6515
Parameter
T
A
T
=25 C unless otherwise noted
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
- Continuous
I
I
I
V
V
I
I
I
V
C
C
C
C
C
C
1. Emitter 2. Base 3. Collector
CE
CB
CB
= 0.5mA, I
=10 A, I
= 10 A, I
= 2.0mA, V
= 100mA, V
= 50mA, I
= 30V, I
= 30V, I
= 10V, I
1
Test Condition
E
C
E
E
B
E
B
= 0
= 0
CE
= 0
= 0, T = 60 C
= 5.0mA
= 0, f = 100kHz
CE
= 0
= 10V
= 10V
MPS6515
TO-92
83.3
625
200
5.0
Max.
-55 ~ +150
1. Base 2. Emitter 3. Collector
*MMBT6515
Value
200
4.0
25
40
3
Min.
250
150
4.0
25
40
350
357
2.8
1
Max.
500
1.0
0.5
3.5
SOT-23
50
Mark: 3J
2
Rev. A. February 2003
mW/ C
Units
mW
Units
C/W
C/W
mA
V
V
V
Units
C
nA
pF
V
V
V
V
A
Related parts for MPS6515
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
MPS6515 Summary of contents
Page 1
... SOT-23 TO-92 1 Mark Base 2. Emitter 3. Collector Value Units 25 40 4.0 200 -55 ~ +150 Min. Max 4.0 50 1.0 = 10V 250 500 = 10V 150 0.5 3.5 Max. Units MPS6515 *MMBT6515 625 350 mW 5.0 2.8 mW/ C 83.3 C/W 200 357 C/W Rev. A. February 2003 Units ...
Page 2
... Package Dimensions ©2003 Fairchild Semiconductor Corporation TO-92 Dimensions in Millimeters Rev. A. February 2003 ...
Page 3
... Package Dimensions ©2003 Fairchild Semiconductor Corporation ©2003 Fairchild Semiconductor Corporation (Continued) SOT-23 Dimensions in Millimeters Rev. A. February 2003 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...