This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Electrical Characteristics Symbol Parameter BV Collector-Base Breakdwon Voltage CBO BV Collector-Emitter Breakdown Voltage CEO BV Emitter-Base Breakdown Voltage EBO I Collector Cut-off Current CBO I Emitter Cut-off Current EBO h DC Current Gain * FE1 h FE2 V Collector-Emitter Saturation ...
Typical Performance Characteristics Figure 7. Forward Biased Safe Operating Area 10 I (Pulse) 1ms C 5ms I (DC 0 Single Pulse 0. [V], COLLECTOR-EMITTER VOLTAGE CE Figure 9. Power ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A FAST CEx™ FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...