BD681S Fairchild Semiconductor, BD681S Datasheet - Page 3

• Manufacturer Part Number: BD681S
• Description: TRANSISTOR NPN 100V 4A TO-126
• Manufacturer: Fairchild Semiconductor

Specifications of BD681S

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
• Current - Collector Cutoff (max): 500µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 750 @ 1.5A, 3V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-126-3
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage(max): 100V
• Emitter-base Voltage (max): 5V
• Collector-emitter Saturation Voltage: 2.5@30mA@1.5AV
• Collector Current (dc) (max): 4A
• Dc Current Gain: 750@1.5A@3V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-126
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Compliant

©2000 Fairchild Semiconductor International
Package Demensions
ø3.20
[2.28 0.20]
2.28TYP
0.75
1.60
0.75
0.10
0.10
0.10
0.10
8.00
#1
0.30
[2.28 0.20]
2.28TYP
TO-126
(1.00)
0.50
3.25
1.75
(0.50)
+0.10
–0.05
Dimensions in Millimeters
0.20
0.20
Rev. A, February 2000