2N2222 STMicroelectronics, 2N2222 Datasheet - Page 2

• Manufacturer Part Number: 2N2222
• Description: TRANSISTOR NPN 30V .8A TO-18
• Manufacturer: STMicroelectronics
• Type: Switchr

Specifications of 2N2222

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 500mW
• Frequency - Transition: 250MHz
• Mounting Type: Through Hole
• Package / Case: TO-18-3, TO-206AA, Metal Case
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.8 A
• Power Dissipation: 1.8 W
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 175 C
• Dc Collector/base Gain Hfe Min: 35
• Current, Collector: 0.8 A
• Current, Gain: 300
• Device Dissipation: 1.8 W
• Frequency: 250 MHz
• Gain, Dc Current, Maximum: 300 @ 150 A, 10 V
• Gain, Dc Current, Minimum: 100 @ 150 mA, 10 V
• Package Type: TO-18
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Temperature Range, Junction, Operating: 175 °C
• Thermal Resistance, Junction To Ambient: 300 °C⁄W
• Voltage, Breakdown, Collector To Base: 60 V
• Voltage, Breakdown, Collector To Emitter: 30 V
• Voltage, Breakdown, Emitter To Base: 5 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 30 V
• Voltage, Collector To Emitter, Saturation: 1.6 V
• Voltage, Emitter To Base: 5 V
• Voltage, Saturation, Collector To Emitter: 0.4 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-3106-5

2N2218-2N2219-2N2221-2N2222
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
* Pulsed : pulse duration = 300 s, duty cycle = 1 %.
2/5
V
V
V
V
V
R
R
Symbol
(BR)CE O
( BR) CBO
( BR) EBO
R
CE (s at )
B E (s at )
C
t h j- cas e
t h j-amb
I
I
h
CBO
E BO
e (h ie )
F E
f
CBO
T
*
*
*
*
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Collector Cutoff Current
(I
Emitter Cutoff Current
(I
Colllector-base Breakdown
Voltage (I
Collector-emitter Breakdown
Voltage (I
Emittter-base Breakdown
Voltage (I
Collector-emitter Saturation
Voltage
Base-emitter Saturation
Voltage
DC Current Gain
Transition Frequency
Collector-base Capacitance
Real Part of Input
Impedance
E
C
= 0)
= 0)
Parameter
E
B
C
= 0)
= 0)
= 0)
V
V
V
I
I
I
I
I
I
I
for 2N 221 8
I
I
I
I
I
I
for 2N 221 9
I
I
I
I
I
I
I
f = 100 MHz
I
f = 100 kHz
I
f = 300 MHz
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
E
C
amb
CB
CB
E B
= 10 A
= 10 mA
= 10 A
= 150 mA
= 500 mA
= 150 mA
= 500 mA
= 0.1 mA
= 1 mA
= 10 mA
= 150 mA
= 500 mA
= 150 mA
= 0.1 mA
= 1 mA
= 10 mA
= 150 mA
= 500 mA
= 150 mA
= 20 mA
= 0
= 20 mA
= 50 V
= 50 V
= 3 V
= 25 C unless otherwise specified)
Test Conditions
and 2N 22 21
and 2N 22 22
T
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
B
B
B
B
am b
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CB
CE
= 15 mA
= 50 mA
= 15 mA
= 50 mA
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
= 1 V
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
= 1 V
= 20 V
= 10 V
= 20 V
= 150 C
Max
Max
Min.
100
250
60
30
20
25
35
40
20
20
35
50
75
30
50
187.5 C/W
5
2 N22 18
2 N22 19
50 C/W
Typ.
Max.
120
300
0.4
1.6
1.3
2.6
10
10
10
60
8
83.3 C/W
300 C/W
2N 222 1
2N 222 2
Unit
MHz
nA
nA
pF
V
V
V
V
V
V
V
A