D45H5 STMicroelectronics, D45H5 Datasheet - Page 3

• Manufacturer Part Number: D45H5
• Description: TRANSISTOR PNP -45V -10A TO-220
• Manufacturer: STMicroelectronics

Specifications of D45H5

• Transistor Type: PNP
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 1V @ 400mA, 8A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 4A, 1V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: - 5 V
• Maximum Dc Collector Current: 10 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: - 10 A
• Dc Collector/base Gain Hfe Min: 60
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2587-5

D44H8, D44H11, D45H8, D45H11
2
Note:
Electrical characteristics
T
Table 4.
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
For PNP types voltage and current values are negative.
V
case
V
V
CEO(sus)
Symbol
CE(sat)
BE(sat)
h
I
I
EBO
FE
CES
= 25 °C; unless otherwise specified.
(1)
(1)
(1)
(1)
Electrical characteristics
Collector-emitter
sustaining voltage (I
Collector cut-off current
(V
Emitter cut-off current
(I
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
DC current gain
C
BE
= 0)
= 0)
Parameter
Doc ID 4213 Rev 5
B
= 0)
I
D44H8 - D45H8
D44H11 - D45H11
V
V
I
I
I
I
C
C
C
C
C
CE
EB
= 8 A
= 8 A
= 2
= 4
= 100 mA
= 5 V
= rated V
Test conditions
A_
A_ _
CEO
V
V
I
I
B
B
CE
CE
= 0.4 A
= 0.8 A
= 1 V
= 1 V
Electrical characteristics
Min.
60
80
60
40
Typ.
-
-
-
-
-
-
-
Max.
100
1.5
10
1
Unit
µA
µA
V
V
V
3/8