MJ2955 STMicroelectronics, MJ2955 Datasheet - Page 3

• Manufacturer Part Number: MJ2955
• Description: TRANSISTOR PWR COMPL TO-3
• Manufacturer: STMicroelectronics

Specifications of MJ2955

• Transistor Type: PNP
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 3V @ 3.3A, 10A
• Current - Collector Cutoff (max): 700µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 4A, 4V
• Power - Max: 115W
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 15 A
• Power Dissipation: 115 W
• Continuous Collector Current: 15 A
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Frequency: 3 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-6712; MJ2955

2N3055 MJ2955
2
Table 3.
1. Pulsed : Pulse duration = 300 µs, duty cycle
Note:
V
V
V
CEO(sus)
CER(sus)
Symbol
CE(sat)
V
h
I
I
I
CEX
CEO
EBO
BE
FE
(1)
(1)
(1)
(1)
(1)
Electrical characteristics
(T
For PNP type voltage and current values are negative
Collector cut-off current
(V
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-emitter sustaining
voltage (I
Collector-emitter sustaining
voltage (R
Collector-emitter saturation
voltage
Base-emitter voltage
DC current gain
case
Electrical characteristics
B
C
BE
= 0)
= 0)
= 25°C; unless otherwise specified)
= -1.5 V)
B
BE
= 0)
Parameter
= 100 Ω)
≤
1.5%
V
V
V
V
I
I
I
I
I
I
I
C
C
C
C
C
C
C
CE
CE
CE
EB
= 200 mA
= 200 mA
= 4 A
= 10 A
= 4 A
= 4 A
= 10 A
= 7 V
= 100 V
= 100 V
= 30 V
Test conditions
T
C
I
I
V
V
V
B
B
= 150
CE
CE
CE
= 400 mA
= 3.3 A
= 4 V
= 4 V
= 4 V
o
C
Min.
60
70
20
5
Typ.
Electrical characteristics
Max.
0.7
1.8
70
1
5
5
1
3
Unit
mA
mA
mA
mA
V
V
V
V
V
3/7