2STC2510 STMicroelectronics, 2STC2510 Datasheet - Page 3

• Manufacturer Part Number: 2STC2510
• Description: TRANS NPN HP BIPO 100V TO-3P
• Manufacturer: STMicroelectronics

Specifications of 2STC2510

• Transistor Type: NPN
• Current - Collector (ic) (max): 25A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 1.2A, 12A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 12A, 4V
• Power - Max: 125W
• Frequency - Transition: 20MHz
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 100V
• Transition Frequency Typ Ft: 20MHz
• Power Dissipation Pd: 125W
• Dc Collector Current: 25A
• Dc Current Gain Hfe: 80
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 497-6956-5

2STC2510
2
Electrical characteristics
(T
Table 4.
1.
V
V
V
V
case
Symbol
(BR)CEO
(BR)EBO
CE(sat)
Pulsed duration = 300 µs, duty cycle ≤ 1.5 %
(BR)CBO
V
I
I
h
CBO
EBO
BE
f
FE
T
(1)
= 25 °C; unless otherwise specified)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-emitter breakdown
voltage (I
Collector-base breakdown
voltage (I
Emitter-base breakdown
voltage (I
Collector-emitter saturation
voltage
Base-emitter voltage
DC current gain
Transition frequency
E
C
= 0)
= 0)
Parameter
B
E
C
= 0)
= 0)
= 0)
V
V
I
I
I
I
V
I
I
C
C
E
C
C
C
CB
EB
CE
= 50 mA
= 100 µA
= 1 mA
= 12 A
= 12 A
= 0.5 A
= 6 V
= 100 V
= 4 V
Test conditions
V
I
V
I
B
C
CE
CE
= 1.2 A
= 12 A
= 12 V
= 4 V
Min.
100
100
Electrical characteristics
40
6
Typ.
20
Max.
1.5
1.8
10
10
80
MHz
Unit
µA
µA
V
V
V
V
V
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