MMBT2907ALT1G ON Semiconductor, MMBT2907ALT1G Datasheet

TRANS GP SS PNP 60V SOT23

MMBT2907ALT1G

Manufacturer Part Number
MMBT2907ALT1G
Description
TRANS GP SS PNP 60V SOT23
Manufacturer
ON Semiconductor
Type
General Purposer
Datasheets

Specifications of MMBT2907ALT1G

Transistor Type
PNP
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1.6V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
225mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
60V
Collector-base Voltage(max)
60V
Emitter-base Voltage (max)
5V
Collector Current (dc) (max)
600mA
Power Dissipation
300mW
Frequency (max)
200MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Configuration
Single
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
- 0.6 A
Maximum Dc Collector Current
0.6 A
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
75 at 0.1 mA at 10 V
Minimum Operating Temperature
- 55 C
Current, Collector
-600 mA
Current, Gain
50
Frequency
200 MHz
Polarity
PNP
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
-60 V
Voltage, Collector To Base
-60 V
Voltage, Collector To Emitter
-60 V
Voltage, Collector To Emitter, Saturation
-1.6 V
Voltage, Emitter To Base
-5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
111806
MMBT2907ALT1GOS
MMBT2907ALT1GOS
MMBT2907ALT1GOSTR

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MMBT2907ALT1G
General Purpose Transistors
PNP Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
3. Reference SOA curve.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 11
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 3)
Total Device Dissipation FR− 5 Board
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) @T
Derate above 25°C
Substrate, (Note 2) @T
Derate above 25°C
Characteristic
A
Rating
= 25°C
A
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
I
P
P
CEO
CBO
EBO
, T
I
CM
qJA
qJA
C
D
D
stg
−55 to +150
−1200
Value
−600
−5.0
Max
−60
−60
225
556
300
417
1.8
2.4
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBT2907ALT1G
MMBT2907ALT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
1
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
Device
ORDERING INFORMATION
2
2F
M
G
MARKING DIAGRAM
BASE
http://onsemi.com
3
1
1
= Device Code
= Date Code*
= Pb−Free Package
Package
(Pb−Free)
(Pb−Free)
SOT−23
COLLECTOR
SOT−23
2F M G
EMITTER
Publication Order Number:
G
SOT−23 (TO−236AB)
3
2
CASE 318
STYLE 6
10,000 Tape & Reel
MMBT2907ALT1/D
3000 Tape & Reel
Shipping

Related parts for MMBT2907ALT1G

MMBT2907ALT1G Summary of contents

Page 1

... D 300 mW 2.4 mW/°C R 417 °C/W qJA −55 to +150 °C J stg MMBT2907ALT1G MMBT2907ALT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER 3 SOT−23 (TO−236AB) ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note −1.0 mAdc −10 mAdc Collector −Base Breakdown Voltage (I C Emitter −Base Breakdown Voltage (I = ...

Page 3

T = 150°C J 25°C - 55°C 100 10 1.0 -1.0 -0 -1 -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 300 200 t r 100 ...

Page 4

TYPICAL SMALL−SIGNAL Characteristics 10 8.0 = 430 -1.0 mA -500 mA 560 W s - -100 mA 1 ...

Page 5

TYPICAL SMALL−SIGNAL Characteristics 1.2 1 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 13. Base Emitter Voltage vs. Collector Current 10 ...

Page 6

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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