BC847ALT1G ON Semiconductor, BC847ALT1G Datasheet - Page 2

• Manufacturer Part Number: BC847ALT1G
• Description: TRANS NPN LP 100MA 45V SOT23
• Manufacturer: ON Semiconductor

Specifications of BC847ALT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 2mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 110 at 2 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 110
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC847ALT1GOSTR

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage BC846A,B
Collector −Emitter Breakdown Voltage BC846A,B
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current (V
DC Current Gain
Collector −Emitter Saturation Voltage (I
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage (I
Base −Emitter Saturation Voltage
Base −Emitter Voltage (I
Base −Emitter Voltage
Current −Gain − Bandwidth Product
Output Capacitance (V
Noise Figure (I
(I
(I
(I
(I
(I
(I
(I
V
f = 1.0 kHz, BW = 200 Hz)
C
C
C
E
C
C
C
CE
= 1.0 mA)
= 10 mA)
= 10 mA, V
= 10 mA)
= 10 mA, V
= 2.0 mA, V
= 10 mA, V
= 5.0 Vdc, R
C
EB
CE
= 0.2 mA,
CE
CE
= 0)
= 5.0 V)
S
= 5.0 Vdc, f = 100 MHz)
= 5.0 V)
= 2.0 kW,
(I
CB
C
C
= 10 V, f = 1.0 MHz)
= 2.0 mA, V
= 10 mA, V
CB
= 30 V)
Characteristic
(I
C
C
= 10 mA, I
= 100 mA, I
CE
(I
CE
C
C
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
BC847A,B,C BC850B,C
BC848A,B,C, BC849B,C
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
(V
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B,
BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
BC846A,B, BC847A,B,C, BC848A,B,C
BC849B,C, BC850B,C
= 5.0 V)
= 10 mA, I
= 100 mA, I
(T
= 5.0 V)
CB
A
= 25°C unless otherwise noted)
= 30 V, T
B
B
= 0.5 mA)
= 5.0 mA)
B
B
= 0.5 mA)
A
= 5.0 mA)
= 150°C)
http://onsemi.com
2
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
C
BE(on)
h
CBO
NF
f
obo
FE
T
Min
200
420
580
100
110
6.0
6.0
5.0
65
45
30
80
50
30
80
50
30
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
150
270
180
290
520
660
0.7
0.9
90
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.25
220
450
800
700
770
5.0
0.6
4.5
4.0
15
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MHz
Unit
mV
nA
mA
pF
dB
V
V
V
V
−
V
V