KST42MTF Fairchild Semiconductor, KST42MTF Datasheet - Page 3

• Manufacturer Part Number: KST42MTF
• Description: TRANS NPN 300V 350MW SOT23
• Manufacturer: Fairchild Semiconductor

Specifications of KST42MTF

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 10V
• Power - Max: 350mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 50 MHz
• Dc Collector/base Gain Hfe Min: 40
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: KST42MTFTR

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
1000
100
100
10
10
Figure 3. Collector-Base Capacitance
1
0.1
1
Figure 1. DC current Gain
V
V
CE
CB
= 10V
I
C
[V], COLLECTOR-BASE VOLTAGE
[mA], COLLECTOR CURRENT
1
10
10
I
f = 1MHz
E
= 0
100
100
Figure 2. Collector-Emitter Saturation Voltage
Figure 4. Current Gain Bandwidth Product
0.01
0.1
10
120
100
1
80
60
40
20
0
1
1
Base-Emitter Saturation Voltage
V
CE
V
= 20V
CE
I
V
(sat)
C
I
BE
[mA], COLLECTOR CURRENT
C
(sat)
[mA], COLLECTOR CURRENT
10
10
100
I
C
= 10 I
Rev. A2, November 2002
100
B