MMBT5087 Fairchild Semiconductor, MMBT5087 Datasheet

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MMBT5087

Manufacturer Part Number
MMBT5087
Description
TRANSISTOR GP PNP AMP SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MMBT5087

Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Current - Collector Cutoff (max)
10nA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 100µA, 5V
Power - Max
350mW
Frequency - Transition
40MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
- 3 V
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
350 mW
Maximum Operating Frequency
40 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
250
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
50V
Collector-base Voltage
50V
Emitter-base Voltage
3V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
250
Frequency (max)
40MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBT5087TR

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©2003 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
• This device is designed for low level, high gain, low
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse Width
V
V
V
I
T
Off Characteristics
V
V
I
I
On Characteristics
h
V
V
Small Signal Characteristics
f
C
h
NF
C
CEO
CBO
T
noise general purpose amplifier applications at
collector currents to 50mA.
FE
fe
J
Symbol
CEO
CBO
EBO
(BR)CEO
(BR)CBO
CE(sat)
BE(on)
cb
, T
Symbol
stg
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector-Base Capacitance
Small-Signal Current Gain
Noise Figure
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
300 s, Duty Cycle
Parameter
2N5086/2N5087/MMBT5087
2.0%
T
a
=25 C unless otherwise noted
Parameter
T
a
=25 C unless otherwise noted
I
I
V
V
V
I
I
I
I
I
I
V
I
f = 1.0KHz
I
R
I
R
f = 10Hz to 15.7KHz
- Continuous
C
C
C
C
C
C
C
C
C
C
C
CB
CB
EB
CB
S
S
= -1.0mA, I
= -100 A, I
= -100 A, V
= -1.0mA, V
= -10mA, V
= -10mA, I
= -1.0mA, V
= -500 A, V
= -1.0mA, V
= -100 A, V
= -20 A, V
1. Emitter 2. Base 3. Collector
= 3.0k , f = 1.0KHz
= 10k
= -10V, I
= -35V, I
= -3.0V, I
= -5.0V, I
1
Test Condition
E
E
B
CE
B
C
E
E
CE
CE
CE
CE
CE
CE
CE
= 0
= 0
= -1.0mA
= 0, f = 100KHz
= 0
= 0
= 0
= -5.0V
= -5.0V
= -5.0V
= -5.0V
= -5.0V
= -5.0V, f = 20MHz
= -5.0V,
= -5.0V
TO-92
5086
5087
5086
5087
5086
5087
5086
5087
5086
5087
5086
5087
-55 ~ +150
1. Base 2. Emitter 3. Collector
Value
-100
-3.0
-50
-50
3
Min.
150
250
150
250
150
250
150
250
-50
-50
40
1
-0.85
SOT-23
Max.
Mark: 2Q
-0.3
500
800
600
900
-10
-50
-50
4.0
3.0
2.0
3.0
2.0
Rev. B1, September 2003
2
Units
mA
V
V
V
C
Units
MHz
nA
nA
nA
dB
dB
dB
dB
pF
V
V
V
V

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MMBT5087 Summary of contents

Page 1

... PNP General Purpose Amplifier • This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. Absolute Maximum Ratings* Symbol V Collector-Emitter Voltage CEO V Collector-Base Voltage CBO V Emitter-Base Voltage EBO I Collector current Junction and Storage Temperature ...

Page 2

... Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4 PCB 1.6” 1.6” 0.06." ©2003 Fairchild Semiconductor Corporation T =25 C unless otherwise noted a Parameter Max. Units 2N5086 *MMBT5087 2N5087 625 350 mW 5.0 2.8 mW/ C 83.3 C/W 200 357 C/W Rev. B1, September 2003 ...

Page 3

... I - COLLECTOR CURRENT (mA) C Figure 3. Base-Emitter Saturation Voltage vs Collector Current 100 V = 40V 0.1 0. AMBIENT TEMP ERATURE ( C) A Figure 5. Collector Cutoff Current vs Ambient Temperature ©2003 Fairchild Semiconductor Corporation 0 0.25 0.2 0.15 0.1 0. 100 0.1 Figure 2. Collector-Emitter Saturation Voltage 1 0 °C 0.6 0 ...

Page 4

... SOURCE RESISTANCE ( ) S Figure 9. Wideband Noise Frequency vs Source Resistance 5. 0.5 0.2 0.1 0.001 0. COLLECTOR CURRENT (mA) C Figure 11. Equivalent Input Noise Current vs Collector Current ©2003 Fairchild Semiconductor Corporation (Continuce 100 10 100 Figure 8. Noise Figure vs Frequency 625 = 5V CE 500 SOT-23 375 250 125 0 20,000 ...

Page 5

... Figure 13. Contours of Constanct Narrow Band Noise Figure 1,000,000 100,000 10,000 1,000 100 0.001 0. COLLECTOR CURRENT (mA) C Figure 15. BContours of Constant Narrow Band Noise Figure ©2003 Fairchild Semiconductor Corporation (Continuce) 1,000,000 100,000 10,000 1,000 100 0.001 0.1 1 Figure 14. Contours of Constanct Narrow Band Noise Figure 10,000 V ...

Page 6

... Typical Common Emitter Characteristics -5. 1 1.0 kHz 1.6 1.4 1.2 h and 0 0.6 0.4 -60 -40 - AMBIE NT TEMP ERATURE ( C) A Typical Common Emitter Characteristics ©2003 Fairchild Semiconductor Corporation 100 and 1.0 kHz 0 -25 C 0.01 0.1 -15 -20 -25 Typical Common Emitter Characteristics 100 ° 1.0KHz) ...

Page 7

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B1, September 2003 ...

Page 8

... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2003 Fairchild Semiconductor Corporation (Continued) SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. B1, September 2003 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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