BCP55 Fairchild Semiconductor, BCP55 Datasheet - Page 2

• Manufacturer Part Number: BCP55
• Description: IC TRANS NPN SS GP 1.5A SOT223-4
• Manufacturer: Fairchild Semiconductor

Specifications of BCP55

• Transistor Type: NPN
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 150mA, 2V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1.5 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1.5 W
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 1.5A
• Dc Current Gain (min): 25
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BCP55FSTR

ON CHARACTERISTICS
h
V
V
V
V
V
I
I
OFF CHARACTERISTICS
Symbol
CBO
EBO
FE
CE(
BE(
(BR)CEO
(BR)CBO
(BR)EBO
Electrical Characteristics
sat
on
)
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
Parameter
TA = 25°C unless otherwise noted
I
I
I
I
I
I
I
I
V
V
V
C
C
C
C
C
C
C
E
CB
CB
EB
= 5.0 mA, V
= 150 mA, V
= 500 mA, V
= 500 mA, I
= 500 mA, V
= 10 mA, I
= 100 A, I
= 10 A, I
= 5.0 V, I
= 30 V, I
= 30 V, I
Test Conditions
C
B
E
E
E
C
= 0
B
CE
= 0
= 0
= 0, T
CE
CE
CE
= 0
= 0
= 50 mA
NPN General Purpose Amplifier
= 2.0 V
= 2.0 V
= 2.0 V
= 2.0 V
A
= 125 C
Min
5.0
25
40
25
60
60
Max
250
100
0.5
1.0
10
10
(continued)
Units
nA
V
V
V
V
V
A
A